Article
Nanoscience & Nanotechnology
Yanhui Xing, Yao Zhang, Jun Han, Xu Cao, Boyao Cui, Haixin Ma, Baoshun Zhang
Summary: By utilizing the self-reactive etching mechanism between gallium and gallium oxide, gallium oxide nanopore films were successfully fabricated, with the nanopore structure significantly enhancing the surface-volume ratio of the film. The nanopore film effectively reduced light reflectivity and improved light absorption, leading to enhanced photoelectric detection performance in the fabricated photodetectors based on the as-grown gallium oxide film.
Article
Materials Science, Multidisciplinary
Yancheng Chen, Yingjie Lu, Xun Yang, Shunfang Li, Kaiyong Li, Xuexia Chen, Zhiyang Xu, Jinhao Zang, Chongxin Shan
Summary: The bandgap engineering of gallium oxide (Ga2O3) through controlling the oxygen vacancy density and crystalline disorder has been demonstrated to improve conductivity and significantly reduce the bandgap. Practical applications of bandgap engineering by crystalline disorder have led to the development of deep-ultraviolet photodetectors with high responsivity and detectivity. These findings pave the way for high-performance Ga2O3 optoelectronic and electronic devices.
MATERIALS TODAY PHYSICS
(2021)
Article
Electrochemistry
Yan-Fong Lin, You-Yi Jiang, Bo-Lin Huang, Po-Yen Huang, Wen-Jeng Hsueh, Chun-Ying Huang
Summary: In this study, the effects of UVTA on the electrical properties of In-free amorphous ZnSnO thin films were investigated. It was found that UVTA greatly improved the quality of the films and enhanced their gas sensing characteristics. The strategy of UV-assisted thermal annealing allows for the fabrication of gas sensors at low temperature and is applicable to flexible electronics.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
(2022)
Article
Engineering, Electrical & Electronic
Shunli Wang, Chao Wu, Fengmin Wu, Fabi Zhang, Aiping Liu, Nie Zhao, Daoyou Guo
Summary: Wearable photodetectors have attracted great attention for their potential applications in smart monitoring, and self-powered technology is the future trend. This study successfully constructed an Ag NWs/a-GaO Schottky junction, demonstrating a DUV photodetector with excellent photoelectric performance and mechanical properties.
SENSORS AND ACTUATORS A-PHYSICAL
(2021)
Article
Materials Science, Multidisciplinary
Wenrui Zhang, Wei Wang, Jingxuan Wei, Shihong Xia, Jianguo Zhang, Li Chen, Dongyang Han, Keming Jiang, Zhenhai Yang, Shen Hu, Li Ji, Jichun Ye
Summary: In this study, we integrate an ultrathin Al2O3 capping layer to improve the performance of ε-Ga2O3 MSM photodetectors. The Al2O3 layer effectively reduces the dark current, increases the photocurrent and response speed. The surface passivation mechanism involves the reduction of surface defects and the reconstruction of a faster surface transport channel. The Al2O3/ε-Ga2O3 MSM photodetector achieves high responsivity, detectivity, photo-to-dark ratio, and UV-vis rejection ratio.
MATERIALS TODAY PHYSICS
(2023)
Article
Engineering, Electrical & Electronic
Rishabh Kishore, Kavita Vishwakarma, Arnab Datta
Summary: In this study, an indium-gallium-zinc-oxide metal-semiconductor-metal (M-S-M) photodetector with enhanced spectral response in the solar blind window was demonstrated. It was found that the IGZO film deposited in an argon diluted oxygen ambience (Ar:O-2 = 20:2 sccm) contained a higher atomic percentage of gallium compared to film sputtered in pure argon environment. The higher gallium content in the diluted O-2 sputtered film was advantageous for stretching the spectral response of the detector. The fabricated detector achieved a peak responsivity of 1.12 A/W at 255 nm under 8V bias, when the as-deposited diluted O-2 sputtered film underwent two consecutive anneals. The substantial improvement in responsivity in the solar blind window was attributed to enhanced absorption by IGZO in the deep UV band, resulting from the structural relaxation prompted by the higher gallium content in the as-deposited films.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2023)
Article
Chemistry, Physical
Yan Wang, Jialiang Jiang, Zhichao Song, Jun Zhang
Summary: Lithium gallium oxide (LiGaO2 & LiGa5O8) nanoparticles were successfully synthesized using thermal evaporation method under different atmospheric conditions, with differing synthesis preferences for each type in air or argon. The nanoparticle-based photodetector exhibited significant changes in electrical and luminescence properties, and showed sensitivity to temperature fluctuations.
JOURNAL OF ALLOYS AND COMPOUNDS
(2021)
Article
Engineering, Environmental
Yikai Liao, You Jin Kim, Munho Kim
Summary: In this research, a high sensitivity self-powered UV photodetector with low dark current and low power consumption was developed by constructing a heterojunction on a commercially available substrate. The detector exhibited excellent performance with a dark current as low as 0.45 pA, a detectivity of 1.9 x 1013 Jones, and fast response times. This work provides a cost-effective approach for the development of highly sensitive UV detecting devices.
CHEMICAL ENGINEERING JOURNAL
(2023)
Review
Engineering, Electrical & Electronic
Sreelakshmi Madhavanunni Rekha, Hariprasad Vadakke Neelamana, S. Venkataprasad Bhat
Summary: This review summarizes the recent developments related to solution-derived ZnO-based thin films for ultraviolet (UV) detector applications. The different strategies used for the fabrication of UV detectors, major improvements achieved with solution-processed ZnO thin films of different morphologies, and their UV photoresponse behavior while in conjunction with other potential materials are discussed in this Review. However, a few shortcomings of the solution-based ZnO thin films, such as low quality and high defect density, remain challenges for the advancement of UV PD application. Thus, this Review concludes with a brief overview of such challenges and an outlook on the emerging research directions toward improving the capabilities of solution-processed ZnO-based UV detectors for various purposes.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Physics, Applied
Mei Cui, Yang Xu, Xinyu Sun, Zhengpeng Wang, Hehe Gong, Xuanhu Chen, Tiancheng Hu, Yijun Zhang, Fang-fang Ren, Shulin Gu, Jiandong Ye, Rong Zhang
Summary: In this study, Ga2O3 solar blind photodetectors with different metal-semiconductor contact configurations were constructed and their performance was compared. The Ti/Ga2O3/Ti device operated in a photoconductive mode with high responsivity and rejection ratio, but exhibited sub-gap response and high dark current. The Ni/Ga2O3/Ni device operated in a mixed photovoltaic and photoconductive mode with decent photoresponsivity, high rejection ratio, and eliminated slow photoresponse.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Titao Li, Wei Zheng, Siqi Zhu, Fei Wang, Yanming Zhu, Lemin Jia, Zeguo Lin, Feng Huang
Summary: (AlxGa1-x)(2)O-3 is a promising wide-band-gap sesquioxide for VUV photodetectors and high-power field-effect transistors. This study proposed a high-pressure O-2 (20 atm) annealing strategy to improve the crystallinity of beta-(AlxGa1-x)(2)O-3 and achieve a tunable optical band gap, revealing the local structure of Al3+ and the kinetic mechanism of Al3+ diffusion. The combination of HPOA-treated beta-(Al0.69Ga0.31)(2)O-3 films with p-type graphene led to the fabrication of a VUV photovoltaic detector with improved photovoltage and fast temporal response, providing an important strategy for enhancing the band-gap tunability of sesquioxides and zero-power-consumption photodetectors.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Nanoscience & Nanotechnology
Wenrui Zhang, Wei Wang, Jinfu Zhang, Tan Zhang, Li Chen, Yu Zhang, Yanwei Cao, Li Ji, Jichun Ye
Summary: By establishing a low-defect diffusion barrier, the responsivity and response time of ε-Ga2O3 MSM photodetectors were improved simultaneously.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Crystallography
Zhiheng Huang, Shuren Zhou, Lingrui Chen, Qiqi Zheng, Honglin Li, Yuanqiang Xiong, Lijuan Ye, Chunyang Kong, Siqiang Fan, Hong Zhang, Wanjun Li
Summary: In this study, a high-response solar-blind UV photodetector was fabricated using a novel transparent electrode material, which exhibited high responsivity and excellent detectivity. The potential of transparent photodetector array in solar-blind imaging was also explored.
Review
Physics, Applied
Xiaohu Hou, Yanni Zou, Mengfan Ding, Yuan Qin, Zhongfang Zhang, Xiaolan Ma, Pengju Tan, Shunjie Yu, Xuanzhe Zhou, Xiaolong Zhao, Guangwei Xu, Haiding Sun, Shibing Lon
Summary: Research on gallium oxide for deep-ultraviolet solar-blind detection has attracted significant interest due to its unique material properties and potential applications. Various crystal phases and polymorphous Ga2O3-based solar-blind photodetectors have been studied, with a focus on enhancing performance through techniques such as doping and annealing. DUV imaging technologies based on Ga2O3 SBPDs are systematically summarized, demonstrating promising future prospects for applications.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Physics, Applied
Gavax Joshi, Yogesh Singh Chauhan, Amit Verma
Summary: This study presents the results of low-pressure chemical vapor deposition (LPCVD) of b-Ga2O3 on a c-sapphire substrate, with independent control of the Ga precursor and substrate temperatures. It was found that the island/nanorod formation occurred at a substrate temperature of 600-750°C, while thin film growth occurred at a substrate temperature of 825-1050°C.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Physical
Manoj K. Yadav, Arnab Mondal, Subhashis Das, Satinder K. Sharma, Ankush Bag
JOURNAL OF ALLOYS AND COMPOUNDS
(2020)
Article
Engineering, Electrical & Electronic
Manoj K. Yadav, Arnab Mondal, Shivangi Shringi, Satinder K. Sharma, Ankush Bag
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2020)
Article
Materials Science, Multidisciplinary
Arnab Mondal, Manoj K. Yadav, Ankush Bag
Article
Engineering, Electrical & Electronic
Manoj K. Yadav, Arnab Mondal, Satinder K. Sharma, Ankush Bag
Summary: The research explores the possibility of growing beta-Ga2O3 on low-cost Si(100) substrate using PLD technique and confirms the good crystalline quality and uniformity of the film. Investigations into the electrical properties and interface trap properties of SBDs were conducted, providing insights into potential improvements for integrating beta-Ga2O3 with Si electronics.
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Sangita Bhowmick, Rajib Saha, Madhuri Mishra, Arnab Mondal, Ankita Sengupta, Ankush Bag, Sanatan Chattopadhyay, Subhananda Chakrabarti
Summary: This study investigates the impact of oxygen flow rate on the optical and electrical properties of RF sputtered Ga2O3 thin film. The results show that the morphology and optical properties of Ga2O3 thin film change under different oxygen flow rate conditions. Additionally, the oxygen flow rate is found to affect the dark current of Ga2O3/p-Si heterojunctions.
NANOENGINEERING: FABRICATION, PROPERTIES, OPTICS, THIN FILMS, AND DEVICES XIX
(2022)
Article
Engineering, Electrical & Electronic
Arnab Mondal, Santu Nandi, Manoj K. Yadav, Arpit Nandi, Ankush Bag
Summary: A deep ultraviolet photodetector based on Sn-doped Ga2O3 and SnO2 nanostructures has been developed, exhibiting high sensitivity and performance.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Ashish Kumar, Jagriti Ahuja, Arnab Mondal, Ankush Bag
Summary: Recent developments in Ga2O3-based heterostructures have opened up a new area of applications in optoelectronic devices for deep-ultraviolet photodetection. This paper presents the fabrication of a Ga-In NPs-based photodetector using an inexpensive electrospinning technique, which exhibits ultra-low dark current and high photocurrent performance.
IEEE TRANSACTIONS ON NANOTECHNOLOGY
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Manoj K. Yadav, Arnab Mondal, Shiv Kumar, Satinder K. Sharma, Ankush Bag
Summary: The research focuses on the feasibility of cost-effective integration of beta-Ga2O3 with well-established technology Si, showing promising potential for commercial applications and challenges for high-performance power devices.
2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA)
(2021)