Journal
CHEMICAL PHYSICS LETTERS
Volume 652, Issue -, Pages 27-31Publisher
ELSEVIER
DOI: 10.1016/j.cplett.2016.03.055
Keywords
Boron nitride nanotubes; Low pressure chemical vapor deposition; Remote catalysts; High purity
Funding
- National Natural Science Foundation of China, China [51522211, 51372265, 51528203]
- Natural Science Foundation of Jiangsu Province, China [BK20140392]
- Science and Technology Project of Suzhou, China [SZS201508, ZXG201428, ZXG201401]
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Direct deposition of high purity and quality boron nitride nanotubes (BNNTs) on Si substrate were obtained using low pressure chemical vapor deposition (LPCVD). We find Fe-Mg-O species may act as catalysts for growing BNNTs. This synthesis process conforms to vapor-liquid-solid (VLS) growth mechanism. As-grown BNNTs also show a large optical energy band gap of 6.12 eV, approaching to hexagonal phase BN single crystals. Meanwhile, as-grown BNNTs exhibit an intense UV-emission band located at 345 nm and a weak deep band at 237 nm. Their optoelectronic properties make them have promising for future nanoscale deep-UV light emitting devices. (C) 2016 Elsevier B.V. All rights reserved.
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