Journal
INTERNATIONAL JOURNAL OF HYDROGEN ENERGY
Volume 45, Issue 33, Pages 16614-16621Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ijhydene.2020.04.090
Keywords
Interfacial engineering; Bifunctional; Visible-light driven; Hydrogen production; Ni(OH)(2)
Categories
Funding
- National Natural Science Foundation of China [51902077]
- Natural Science Foundation of Zhejiang Province [LQ19B010001, LY18E020010]
- Funding for scientific research start-up of Hangzhou Normal University [4095C5021820441, 4095C5021820406]
- Pandeng Plan Foundation of Hangzhou Normal University for Youth Scholars of Materials, Chemistry and Chemical Engineering, National College Students' Science and Technology Innovation Project [201910346045, 201910346038, 201910346030]
- Zhejiang Province Ten Thousand People Plan, Agricultural and Social Development Program Project of Hangzhou Science and Technology Bureau of Zhejiang Province [20191203B03]
- Zhejiang Provincial Department of Education [Y201840068, Y201533640]
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Sunlight driven hydrogen production by water splitting represents a sustainable approach for hydrogen energy utilization, however, solo semiconductor could not meet the current demand. Herein, as proof of concept, we put forward a bifunctional interface of Ni(OH)(2)/Pt cocatalyst loaded on anatase TiO2 through a selective deposition process. Ni(OH)(2)/Pt interface facilitates H2O adsorption by providing two adsorption sites: O is selectively adsorbed on Ni(OH)(2) and H adsorbed on metallic Pt. Beyond that, Ni(OH)(2)/Pt interface also extends light absorption range of TiO2 to visible light region and accelerates the separation of photo-generated electrons/holes for semiconductor TiO2. Benefiting from this interfacial engineering in semiconductor, the visible-light driven hydrogen production performance of the as-obtained Ni(OH)(2)/Pt/TiO2 sample is greatly boosted with a rate of 5875 mmol g(-1) h(-1), 2.6 times higher than that of Pt/TiO2. (C) 2020 Hydrogen Energy Publications LLC. Published by Elsevier Ltd. All rights reserved.
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