Journal
CIRCUITS SYSTEMS AND SIGNAL PROCESSING
Volume 39, Issue 11, Pages 5848-5861Publisher
SPRINGER BIRKHAUSER
DOI: 10.1007/s00034-020-01421-x
Keywords
Memristor; MOSFET; Memductance; Hysteresis loop; Floating; Grounded
Categories
Ask authors/readers for more resources
Simple and integrable MOS-only memristor emulator circuits exploiting a dynamic threshold feature of MOSFET and requiring no DC bias have been presented here. The propositions herein require no external capacitors. In these two circuit propositions of floating and grounded memristor emulators, the static power consumption is zero. Theoretical justifications of the propositions have been validated by simulations carried out on the Cadence Virtuoso-Spectre tool with 180 nm CMOS GPDK parameters. Further, the experimental verification has also been done using ALD1116 and ALD1117 MOSFETs to demonstrate the practical viability of the memristor emulators of this communication.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available