Journal
APPLIED PHYSICS LETTERS
Volume 116, Issue 19, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5144694
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Funding
- National Key R&D Program of China [2018YFA0306800]
- National Natural Science Foundation of China [11774154, 11790311, 11674165]
- Fok Ying-Tong Education Foundation of China [161006]
- Fundamental Research Funds for the Central Universities [021314380147]
- Program for High-Level Entrepreneurial and Innovative Talents Introduction of Jiangsu Province
- High-Performance Computing Center of Collaborative Innovation Center of Advanced Microstructures
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The direct bandgap transition and spin-orbit-coupling-induced spin-splitting in monolayer transition metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te) show great application potential in high-efficient optoelectronic devices and valleytronics and, thus, have attracted enormous research interest in recent years. Various MX2 monolayers usually show a distinct bandgap and spin-splitting size. Here, we realized the molecular beam epitaxial growth of monolayer MoxW1-xSe2 alloys with a controllable stoichiometric ratio x. Combining with the in situ angle-resolved photoemission spectroscopic and x-ray photoemission spectroscopic measurements, we determined the evolution of the valence band dispersion and the spin-splitting size with the change in the Mo ratio x. We found that the energy difference of both the valence band between the Gamma and K points and the spin-splitting size at the K point reduce monotonically with the increasing Mo ratio x. The growth of MoxW1-xSe2 monolayer alloys and the method to control the stoichiometric ratio of Mo/W atoms provide an effective way to engineer the band structures in the two-dimensional MX2 materials. Published under license by AIP Publishing.
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