Influence of GaAs and GaSb substrates on detection parameters of InAs/GaSb superlattice-based mid-infrared interband cascade photodetectors

High operating temperature nBn detector with monolithically integrated microlens

(2018) Alexander Soibel et al.   APPLIED PHYSICS LETTERS

Type-II InAs/GaSb (InAsSb) superlattices for interband cascade midwavelength detectors

(2018) Klaudia Hackiewicz et al.   OPTICAL ENGINEERING

Mid-wave T2SLs InAs/GaSb single pixel PIN detector with GaAs immersion lens for HOT condition

(2016) Piotr Martyniuk et al.   SOLID-STATE ELECTRONICS

High operating temperature interband cascade midwave infrared detector based on type-II InAs/GaSb strained layer superlattice

(2012) Nutan Gautam et al.   APPLIED PHYSICS LETTERS

Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate

(2010) E Plis et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Interfacial misfit array formation for GaSb growth on GaAs

(2009) Shenghong Huang et al.   JOURNAL OF APPLIED PHYSICS