Journal
ADVANCED MATERIALS
Volume 32, Issue 28, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adma.202001943
Keywords
magnetoelectrics; multiferroics; nonvolatile memories; spintronics; ultralow-power spintronics
Categories
Funding
- U.S. Department of Energy Advanced Manufacturing Office
- National Science Foundation [DMR-1708615]
- Laboratory Directed Research and Development Program of Lawrence Berkeley National Laboratory under U.S. Department of Energy (DOE) Contract [DE-AC02-05CH11231]
- NSF: DMR: MRI Development grant [1726862]
- Luxembourg National Research Fund through the CORE program [FNR/C18/MS/12705883 REFOX]
- Intel Corp. through the FEINMAN program
- US Department of Energy, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division [DE-AC02-05CH11231, KCWF16]
- DOE Office of Science User Facility [DE-AC02-05CH11231]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1726862] Funding Source: National Science Foundation
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Spintronic elements based on spin transfer torque have emerged with potential for on-chip memory, but they suffer from large energy dissipation due to the large current densities required. In contrast, an electric-field-driven magneto-electric storage element can operate with capacitive displacement charge and potentially reach 1-10 mu J cm(-2) switching operation. Here, magneto-electric switching of a magnetoresistive element is shown, operating at or below 200 mV, with a pathway to get down to 100 mV. A combination of phase detuning is utilized via isovalent La substitution and thickness scaling in multiferroic BiFeO3 to scale the switching energy density to approximate to 10 mu J cm(-2). This work provides a template to achieve attojoule-class nonvolatile memories.
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