Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 24, Pages 27361-27367Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.0c05850
Keywords
two-dimensional materials; hexagonal boron nitride; ion beam sputtering deposition; deep ultraviolet photodetectors; hexagonal boron-carbon-nitrogen; doping
Funding
- National Key R&D Program of China [2018YFB0406500]
- National Natural Science Foundation of China [61674137, 61874106, 61904174]
- Beijing Municipal Science and Technology Project [Z181100004418007]
- Strategic Priority Research Program of Chinese Academy of Sciences [XDB43000000]
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Recently, the deep ultraviolet (DUV) photodetectors fabricated from two-dimensional (2D) hexagonal boron nitride (h-BN) layers have emerged as a hot research topic. However, the existing studies show that the h-BN-based photodetectors have relatively poor performance. In this work, C doping is utilized to modulate the properties of h-BN and improve the performance of the h-BN-based photodetectors. We synthesized the h-BN atomic layers with various C concentrations varying from 0 to 10.2 atom % by ion beam sputtering deposition through controlling the sputtering atmosphere. The h-BN phase remains stable when a small amount of C is incorporated into h-BN, whereas the introduction of a large amount of C impurities leads to the rapidly deteriorated crystallinity of h-BN. Furthermore, the DUV photodetectors based on C-doped h-BN layers were fabricated, and the h-BN-based photodetector with 7.5 atom % C exhibits the best performance with a responsivity of 9.2 mA.W-1, which is significantly higher than that of the intrinsic h-BN device. This work demonstrates that the C doping is a feasible and effective method for improving the performance of h-BN photodetectors.
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