Improved Performance of CH3NH3PbI3–xClx Resistive Switching Memory by Assembling 2D/3D Perovskite Heterostructures

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Title
Improved Performance of CH3NH3PbI3–xClx Resistive Switching Memory by Assembling 2D/3D Perovskite Heterostructures
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 12, Issue 13, Pages 15439-15445
Publisher
American Chemical Society (ACS)
Online
2020-03-09
DOI
10.1021/acsami.9b22732

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