Journal
SCIENCE ADVANCES
Volume 6, Issue 10, Pages -Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.aaz0948
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Funding
- U.S. Department of Energy (DOE), Office of Science, Basic Energy Sciences (BES) [DE-SC0019064]
- Office of Naval Research [N00014-18-1-2793]
- Kaufman New Initiative research of the Pittsburgh Foundation [KA2018-98553]
- Willner Family Leadership Institute for the Weizmann Institute of Science
- Benoziyo Endowment Fund for the Advancement of Science, Ruth and Herman Albert Scholars Program for New Scientists
- European Research Council (ERC) [815869]
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The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. It is crucial to open a magnetic gap of surface states. However, recent experiments have observed gapless surface states, indicating the absence of out-of-plane surface magnetism, and thus, the quantized Hall resistance can only be achieved at the magnetic field above 6 T. We propose to induce out-of-plane surface magnetism of MnBi2Te4 films via the magnetic proximity with magnetic insulator CrI3. A strong exchange bias of similar to 40 meV originates from the long Cr-e(g) orbital tails that hybridize strongly with Te p orbitals. By stabilizing surface magnetism, the QAH effect can be realized in the MnBi2Te4/CrI3 heterostructure. Moreover, the high-Chern number QAH state can be achieved by controlling external electric gates. Thus, the MnBi2Te4/CrI3 heterostructure provides a promising platform to realize the electrically tunable zero-field QAH effect.
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