A 45 nm CMOS Avalanche Photodiode with 8.4-GHz Bandwidth

A 10-Gb/s −18.8 dBm Sensitivity 5.7 mW Fully-Integrated Optoelectronic Receiver With Avalanche Photodetector in 0.13-$\mu$ m CMOS

(2019) Spoorthi Nayak et al.   IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS

Performance Optimization and Improvement of Silicon Avalanche Photodetectors in Standard CMOS Technology

(2018) Myung-Jae Lee et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Photon-trapping microstructures enable high-speed high-efficiency silicon photodiodes

(2017) Yang Gao et al.   Nature Photonics

First CMOS Silicon Avalanche Photodetectors With Over 10-GHz Bandwidth

(2016) Myung-Jae Lee   IEEE PHOTONICS TECHNOLOGY LETTERS

Avalanche Double Photodiode in 40-nm Standard CMOS Technology

(2013) Mohamed Atef et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Effect of Deep N-Well Bias in an 850-nm Si Photodiode Fabricated Using the CMOS Process

(2013) Fang-Ping Chou et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Area-Dependent Photodetection Frequency Response Characterization of Silicon Avalanche Photodetectors Fabricated With Standard CMOS Technology

(2013) Myung-Jae Lee et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

High-Speed Optical Receivers With Integrated Photodiode in 130 nm CMOS

(2009) Filip Tavernier et al.   IEEE JOURNAL OF SOLID-STATE CIRCUITS

Design and Characterization of CMOS Avalanche Photodiode With Charge Sensitive Preamplifier

(2008) Young Soo Kim et al.   IEEE TRANSACTIONS ON NUCLEAR SCIENCE