Journal
ADVANCED OPTICAL MATERIALS
Volume 8, Issue 6, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201901362
Keywords
flexible light-emitting diodes; InP@ZnSeS; photoluminescence quantum yield; waterproof performance
Categories
Funding
- European Commission Horizon2020 [685758]
- Engineering and Physical Sciences Research Council (EPSRC) [EP/P027628/1]
- EPSRC [EP/P027628/1] Funding Source: UKRI
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The development of flexible displays for wearable electronics applications has created demand for high-performance quantum dot (QD) light-emitting diodes (QLEDs) based on QD core@shell structures. Emerging indium phosphide (InP)-based core@shell QDs show promise as lighting material in the field of optoelectronics because they are environmentally friendly material, can be produced in a cost-effective manner, and are capable of tunable emission. While efforts have been made to enhance the performance of InP-based QLED, the stabilities of InP@ZnSeS QDs film and InP@ZnSeS-based QLED in water/air are not yet fully understood, limiting their practical applications. Herein, a highly durable, flexible InP@ZnSeS QLED encapsulated in an ultrathin film of CYTOP, a solution-based amorphous fluoropolymer, is demonstrated. The CYTOP-encapsulated green flexible QLED shows an external quantum efficiency (EQE) of 0.904% and a high luminescence of 1593 cd m(-2) as well as outstanding waterproof performance. The flexible device emits strong luminescence after being immersed in water for approximate to 20 min. Even when subjected to continuous tensile stress with a 5 mm bending radius, the high luminescence is preserved. This waterproof architecture can be a promising strategy for wearable electronics applications.
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