Modified Fractional Photo-Thermoelastic Model for a Rotating Semiconductor Half-Space Subjected to a Magnetic Field

The purpose of this work is to introduce a new modified model for photo-thermoelasticity with regard to a new consideration of generalized heat conduction equations with time-fractional order. We consider an isotropic semiconductor half-space which rotating with uniform angular velocity and subjected to a magnetic field. By applying the technique of normal mode analysis, the analytical expressions for the distribution of the displacement components, temperature, carrier density, the thermal stresses, and Lorentz force are obtained and represented graphically. Comparisons are made between the results expected by the modified new fractional model and the classical one. Also, the effects of rotation, the lifetime of the photo-generated, magnetic field and fractional parameter on all the field variables are investigated.