Journal
AIP ADVANCES
Volume 10, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5129229
Keywords
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Funding
- Engineering and Physical Sciences Research Council (EPSRC) under the program Grant GaN-DaME [EP/P00945X/1]
- EPSRC [EP/N014820/2, EP/M010589/1, EP/P00945X/1] Funding Source: UKRI
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GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm x 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using microwave plasma chemical vapor deposition on etch exposed N-polar AlN epitaxial nucleation layers. Atomic force microscopy and transmission electron microscopy were used to confirm the formation of high quality, void-free AlN/diamond interfaces. The bond between the III-nitride layers and the diamond was validated by strain measurements of the GaN buffer layer. Demonstration of this technology platform is an important step forward for the creation of next generation high power electronic devices. (c) 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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