Article
Materials Science, Multidisciplinary
Xiangyu Xu, Ziqian Sheng, Jueli Shi, Xin Chen, Yaxin He, Wenjing Xu, Xu Zhang, Duanyang Chen, Hongji Qi, Kelvin H. L. Zhang
Summary: The bandgap of (AlxGa1-x)(2)O-3 thin films can be modulated by varying the Al contents, resulting in high-performance photodetectors for solar-blind UV bands. The detection cut-off wavelengths and response peaks of the photodetectors can be tuned by changing the Al contents. The wide variations of the bandgap are mainly due to the upshift of the conduction band edges induced by Al 3s state hybridization.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Wenshan Chen, Xiangyu Xu, Jiaye Zhang, Jueli Shi, Jiawei Zhang, Wencheng Chen, Quin Cheng, Yuzheng Guo, Kelvin H. L. Zhang
Summary: This work reports the fabrication and performance of high performance solar-blind deep-UV photodetectors using (InxGa1-x)(2)O-3 thin films. The results show that controlling the In content in the films can achieve high sensitivity to solar-blind UV spectrum. Compared to Ga2O3, the (InxGa1-x)(2)O-3 films demonstrate enhanced performance due to the modulation of optical and electronic properties by In.
ADVANCED OPTICAL MATERIALS
(2022)
Article
Physics, Applied
Anisha Kalra, Usman Ul Muazzam, R. Muralidharan, Srinivasan Raghavan, Digbijoy N. Nath
Summary: This Perspective discusses the current status and challenges of ultrawide bandgap (UWBG) semiconductor-based deep-UV photodetectors in real-world applications. It introduces a new comprehensive figure of merit to evaluate their performance by considering gain, noise, and bandwidth. The article also raises the question of whether these detectors will ever find significant applications and be used in space-borne platforms for deep-space imaging.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
Yuehui Wang, Haoran Li, Jia Cao, Jiaying Shen, Qingyi Zhang, Yongtao Yang, Zhengang Dong, Tianhong Zhou, Yang Zhang, Weihua Tang, Zhenping Wu
Summary: High-performance avalanche photodetectors (APDs) based on amorphous Ga2O3 (a-Ga2O3)/ITO heterojunction have been successfully fabricated, showing ultrahigh responsivity, specific detectivity, external quantum efficiency, and exceptional capability for detecting ultraweak signals under 254 nm light irradiation. The superior performance of a-Ga2O3-based APDs can be attributed to intrinsic carrier transport mechanisms in a-Ga2O3 and modified band alignment at the heterojunctions, providing greater design flexibility for wide applications of emerging Ga2O3 semiconductor with improved performance.
Article
Chemistry, Multidisciplinary
Yue Ping, Haoran Long, Hui Liu, Chao Chen, Nannan Zhang, Hongmei Jing, Jiangbo Lu, Yiwei Zhao, Zimeng Yang, Wei Li, Fei Ma, Xiaosheng Fang, Zhongming Wei, Hua Xu
Summary: This study reports a polarization sensitive solar-blind ultraviolet photodetector based on ultrathin KNb3O8 nanobelts synthesized via chemical vapor deposition growth. The device exhibits superior photodetection performances in the solar-blind ultraviolet region and displays polarization sensitive photoresponse.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Materials Science, Multidisciplinary
Chien-Yie Tsay, Hsuan-Meng Tsai, Phongsaphak Sittimart, Sreenath Mylo Valappil, Takafumi Kusaba, Tsuyoshi Yoshitake
Summary: The influence of oxygen concentration on the structure and optical characteristics of Ga2O3 thin films was investigated. The Ga2O3 thin films prepared under an oxygen flow ratio of 1% exhibited optimum crystal quality and the lowest oxygen vacancy concentration. Metal-semiconductor-metal photodetectors based on 1% Ga2O3 thin films demonstrated excellent performance.
Article
Chemistry, Multidisciplinary
Xiaohu Hou, Xiaolong Zhao, Ying Zhang, Zhongfang Zhang, Yan Liu, Yuan Qin, Pengju Tan, Chen Chen, Shunjie Yu, Mengfan Ding, Guangwei Xu, Qin Hu, Shibing Long
Summary: The study proposes a defect and doping engineering strategy towards amorphous GaOX (a-GaOX) to achieve highly tolerant and ultra-sensitive solar-blind photodetectors for harsh environments, maintaining high performance even under high temperature or high voltage conditions.
ADVANCED MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Chun-Yan Wu, Ming Wang, Jingyue Li, Yuxuan Le, Wu Fei, Ji-Gang Hu, Di Wu, Yu-Xue Zhou, Lin-Bao Luo
Summary: This paper reports the fabrication of a sensitive deep ultraviolet (DUV) photodetector using GaSe nanobelts, which exhibits high photoresponse and photoconductive gain, and can also function as an effective image sensor.
Article
Chemistry, Physical
Tong Su, Bohan Xiao, Zikang Ai, Lingjie Bao, Wencheng Chen, Yuheng Shen, Qijin Cheng, Kostya (Ken) Ostrikov
Summary: Most high-performance 8-Ga2O3 thin films are currently grown using expensive techniques such as molecular beam epitaxy, metal-organic chemical vapor deposition, and pulsed laser deposition. A custom-made plasma-enhanced chemical vapor deposition method is designed to achieve fast and cost-effective growth of 8-Ga2O3 thin films. The plasma-enhanced thermal oxidation process results in higher growth rates and improved film quality compared to traditional thermal oxidation methods.
APPLIED SURFACE SCIENCE
(2023)
Article
Nanoscience & Nanotechnology
Damanpreet Kaur, Rakhi, Pargam Vashishtha, Govind Gupta, Subhendu Sarkar, Mukesh Kumar
Summary: This study reports a simple and cost-effective method to enhance the device performance of amorphous gallium oxide thin film photodetectors by nanopatterning the surface. The formation of ripples on the surface leads to the creation of anisotropic conduction channels and an increase in surface defects, resulting in a reduction in device decay time and an improvement in device speed.
Article
Materials Science, Multidisciplinary
Simiao Wu, Ningtao Liu, Hui Li, Jinfu Zhang, Shengcheng Shen, Wei Wang, Ning Xia, Yanwei Cao, Zhicheng Zhong, Wenrui Zhang, Jichun Ye
Summary: This study demonstrates the use of Hf doping strategy to enhance the conductivity and widen the bandgap of epitaxial beta-Ga2O3 thin films. By fabricating Hf-doped beta-Ga2O3 films with different doping ratios, the impact of doping on structural, optical, and transport properties is investigated. Optimized doping of 1%-2% in molar ratio results in high n-type conductivity, carrier mobility, carrier concentration, and an ultrawide bandgap. Additionally, density functional theory calculations reveal the atomic site preference of Hf dopants and their impact on the optical bandgap.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Bo Meng, Tao Jing, Wen-Zhi Xiao
Summary: The study predicted a new stable Al2O3 monolayer structure, Te-Al2O3, with mechanical anisotropy and an ultra-wide indirect bandgap. Te-Al2O3 showed anisotropic absorption spectra and is suitable for solar-blind photodetectors, making it a promising semiconductor for UV photodetection.
COMPUTATIONAL MATERIALS SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Jianming Lei, Qing Cai, Jiying Cao, Tongchuan Ma, Jiandong Ye, Dunjun Chen
Summary: A high-performance epsilon-Ga2O3 solar-blind photodetector was successfully fabricated using an interdigital structure. The device exhibited a prominent response peak at 240 nm and a cutoff edge at 266 nm, with a solar-blind UV in-band/out-of-band rejection ratio of 10^5 and a photo-to-dark-current ratio exceeding 10^5. The impact of varying interdigital spacing on device performance was investigated, showing that decreasing spacing increased light current and responsivity, while increasing spacing reduced dark current.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Multidisciplinary
Huishan Wu, Tao Zhang, Leyun Shen, Yunze Liu, Fengzhi Wang, Jianguo Lu, Bin Lu, Xinhua Pan, Zhizhen Ye
Summary: A novel self-powered deep ultraviolet photodetector based on a SnS/Ga2O3 heterojunction modified by an ultrathin SnO layer has been developed. The device demonstrates remarkable photoelectric performance without any power supply, making it suitable for future optoelectronic applications.
ADVANCED MATERIALS INTERFACES
(2022)
Review
Materials Science, Multidisciplinary
Damanpreet Kaur, Mukesh Kumar
Summary: The article discusses the application of gallium oxide-based photodetectors in UV-C radiation sterilization. Despite existing challenges, the paper emphasizes key parameters and future prospects for development in this field.
ADVANCED OPTICAL MATERIALS
(2021)
Article
Physics, Applied
Liang Cheng, Weizong Xu, Danfeng Pan, Huinan Liang, Ronghua Wang, Youhua Zhu, Fangfang Ren, Dong Zhou, Jiandong Ye, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Summary: The study developed gate-first technology in an AlGaN/GaN HEMT with a high-quality in situ SiNx gate dielectric for high-stability power applications. It found almost identical electrical performances between gate-first and gate-last processed devices, while also revealing an annealing-like effect in gate-first devices that enhanced threshold voltage stability. This demonstrates the compatibility of in situ SiNx technology with gate-first GaN HEMT technology.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Review
Physics, Applied
Zhengpeng Wang, Xuanhu Chen, Fang-Fang Ren, Shulin Gu, Jiandong Ye
Summary: Gallium oxide (Ga2O3) as an ultrawide bandgap semiconductor has excellent physical properties and shows promise in power electronics and deep-ultraviolet optoelectronics applications. However, understanding the defect chemistry in Ga2O3, particularly acceptor dopants and carrier compensation effects, remains a challenge. This review summarizes recent advances in investigating defect properties, carrier dynamics, and optical transitions in Ga2O3, shedding light on the microstructures and origins of defects in various forms of Ga2O3.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Engineering, Electrical & Electronic
Hui Guo, Hehe Gong, Pengfei Shao, Xinxin Yu, Jin Wang, Rui Wang, Le Yu, Jiandong Ye, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Summary: This study demonstrated a normally-off AlGaN/GaN HEMT using p-NiO as a gate stack, showing excellent performance and high breakdown voltage, with outstanding stability in terms of V-TH shift.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Physics, Applied
Qinglong Yan, Hehe Gong, Hong Zhou, Jincheng Zhang, Jiandong Ye, Zhihong Liu, Chenlu Wang, Xuefeng Zheng, Rong Zhang, Yue Hao
Summary: This study presents a vertical beta-Ga2O3 Schottky barrier diode with an advanced termination structure and coupled field plate structures to mitigate crowding electric field. The diode exhibits high breakdown voltage and power figure of merit, along with high-quality interface, making it promising for high power applications.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Hehe Gong, Feng Zhou, Xinxin Yu, Weizong Xu, Fang-Fang Ren, Shulin Gu, Hai Lu, Jiandong Ye, Rong Zhang
Summary: This letter reports a special structured 9-mm(2) Ga2O3 Schottky barrier diode with excellent performance and electrothermal ruggedness for high-power applications.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Yuangang Wang, Hehe Gong, Yuanjie Lv, Xingchang Fu, Shaobo Dun, Tingting Han, Hongyu Liu, Xingye Zhou, Shixiong Liang, Jiandong Ye, Rong Zhang, Aimin Bu, Shujun Cai, Zhihong Feng
Summary: By implementing a composite terminal structure with a p-NiO junction termination extension and a small-angle beveled field plate, high-performance p-NiO/ss-Ga2O3 heterojunction diodes were successfully demonstrated. This structure significantly increases the breakdown voltage of ss-Ga2O3 and achieves low ON-resistance, making it a promising candidate for various applications.
IEEE TRANSACTIONS ON POWER ELECTRONICS
(2022)
Article
Nanoscience & Nanotechnology
Haiping Wang, Haifan You, Yang Xu, Xinyu Sun, Yiwang Wang, Danfeng Pan, Jiandong Ye, Bin Liu, Dunjun Chen, Hai Lu, Rong Zhang, Youdou Zheng
Summary: We report high-performance visible-blind ultraviolet phototransistors based on an enhanced HEMT structure. The device exhibits a high photocurrent density, peak responsivity, large photo-to-dark-current ratio, and superior UV-to-visible rejection ratio. Additionally, the device shows an ultrafast response time, which is attributed to the suppression of the persistent photoconductivity effect by the built-in electric field.
Article
Nanoscience & Nanotechnology
Yue Bian, Zhihao Ye, Gengyou Zhao, Kun Tang, Yan Teng, Si Chen, Lijuan Zhao, Xiu Yuan, Shunming Zhu, Jiandong Ye, Hai Lu, Yi Yang, Lan Fu, Shulin Gu
Summary: In this study, a paper-based thermal radiation-enabled evaporation system (TREES) is demonstrated to achieve sustainable and highly efficient salt-collecting desalination. The unique design of the paper-TREES allows for enhanced evaporation and energy efficiency, providing novel insights for the design of next-generation saltharvesting solar evaporators and advancing their applications in green desalination.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Optics
Kui-Ying Nie, Song Luo, Fang-Fang Ren, Xuanhu Chen, Shulin Gu, Zhanghai Chen, Rong Zhang, Jiandong Ye
Summary: In this study, a highly efficient broadband frequency converter was demonstrated through a hybrid plasmonic-dielectric coupler, which enabled the manipulation of nonlinear light-matter interactions at the nanoscale and laid the foundation for the development of on-chip nanophotonic systems.
PHOTONICS RESEARCH
(2022)
Article
Physics, Applied
Yonghao Du, Weizong Xu, Hehe Gong, Jiandong Ye, Feng Zhou, Fangfang Ren, Dong Zhou, Dunjun Chen, Rong Zhang, Youdou Zheng, Hai Lu
Summary: This research explores the device configuration of p-NiO(x) gate cap layer and thin AlGaN barrier layer for normally-off operation in AlGaN/GaN high electron mobility transistors. The results show that this structure provides good gate controllability and channel conduction capability.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Physics, Applied
Chong-De Zhang, Fang-Fang Ren, Mingbin Yu, Baoshan Zhang, Shulin Gu, Rong Zhang, Youdou Zheng, Jiandong Ye
Summary: This study demonstrates the rational design of an Al/Al2O3/Ga2O3 metal-insulator-semiconductor (MIS) photodetector with enhanced responsivity, suppressed sub-gap response, and ultralow dark current.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Optics
Zesen Liu, Xinxin Yu, Jianhong Zhang, Xinghua Liu, Jiandong Ye, Fang -fang Ren, Yiwang Wang, Wei-zong Xu, Dong Zhou, Rong Zhang, Youdou Zheng, Hai Lu
Summary: The authors demonstrated the enhanced light output of 275-nm AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) structures by employing shallow photonic crystal (PC) patterns on the p-AlGaN contact layer surface. The intensity of the emission from the top or bottom can be enhanced by up to 331% or 246%, respectively, compared to the unpatterned sample due to high-order coherent diffraction and Purcell enhancement of spontaneous emission. This study suggests a simpler way for achieving more energy-efficient DUV LEDs with high emission for various applications in disinfection and sterilization.
Article
Physics, Applied
Xinghua Liu, Fang-Fang Ren, Zhengpeng Wang, Xinyu Sun, Qunsi Yang, Yiwang Wang, Jiandong Ye, Xiufang Chen, Wei-Zong Xu, Dong Zhou, Xiangang Xu, Rong Zhang, Hai Lu
Summary: By studying the optical emission spectra of defects, the thermally-driven defect dynamic reaction in ion implanted 4H-SiC has been investigated. The conversion from silicon vacancies (V-Si) to carbon antisite-vacancy pairs (C-Si-V-C) has been observed upon annealing, which provides guidance for defect engineering in SiC.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
Article
Optics
Jinjie Zhu, Qing Cai, Haifan You, Hui Guo, Jin Wang, Junjun Xue, Jiandong Ye, Dunjun Chen
Summary: In this study, an optimized design strategy for Ga2O3/GaN heterostructure bi-color Ultraviolet photodetector was presented, which achieved high responsivity and UV-to-visible rejection ratio. The electric field distribution of the optical absorption region was modified by optimizing the doping concentration and thickness ratio of the heterostructure, enabling better separation and transport of photogenerated carriers. Moreover, the band offset modulation of the Ga2O3/GaN heterostructure enhanced the photoconductive gain, leading to successful dual-band ultraviolet detection with high responsivity.
Article
Engineering, Electrical & Electronic
Yijun Zhang, Yiqing Gong, Xuanhu Chen, Yue Kuang, Jinggang Hao, Fang-Fang Ren, Shulin Gu, Rong Zhang, Jiandong Ye
Summary: In this study, single-domain heteroepitaxy of orthorhombic kappa-Ga2O3 epilayers on sapphire was achieved using the halide vapor-phase epitaxy (HVPE) technique, showing excellent microstructures and optical characteristics. Through proper phase engineering, defect-free single-domain structure was ultimately obtained, providing the possibility to investigate the intriguing ferroelectric behavior of kappa-Ga2O3 and design power devices with improved performance.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
