Research Toward a Heterogeneously Integrated InGaN Laser on Silicon
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Title
Research Toward a Heterogeneously Integrated InGaN Laser on Silicon
Authors
Keywords
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Journal
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
Volume -, Issue -, Pages 1900770
Publisher
Wiley
Online
2019-12-07
DOI
10.1002/pssa.201900770
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Note: Only part of the references are listed.- Enhancement of n-type GaN (20–21) semipolar surface morphology in photo-electrochemical undercut etching
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- Effects of active region design on gain and carrier injection and transport of CW $(20\bar{2}\bar{1})$ semipolar InGaN laser diodes
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