High-performance β-Ga2O3 thickness dependent solar blind photodetector

Gallium oxide (Ga2O3) has been studied as one of the most promising wide bandgap semiconductors during the past decade. Here, we prepared high quality beta-Ga2O3 films by pulsed laser deposition. beta-Ga2O3 films of different thicknesses were achieved and their crystal properties were comprehensively studied. As thickness increases, grain size and surface roughness are both increased. Based on these beta-Ga2O3 films, a series of ultraviolet (UV) photodetectors with interdigital electrodes structure were prepared. These devices embrace an ultralow dark current of 100 fA, and high photocurrent on/off ratio of 10E8 under UV light illumination. The photoresponse time is 4 ms which is faster than most of previous works. This work paves the way for the potential application of Ga2O3 in the field of UV detection. (C) 2020 Optical Society of America under the terms of the OSA Open Access Publishing Agreement