Journal
NANOTECHNOLOGY
Volume 31, Issue 14, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/ab62cf
Keywords
graphene; epitaxial growth; thermal decomposition
Funding
- Asahi Glass Foundation
- Project of Creation of Life Innovation Materials for Interdisciplinary and International Researcher Development of the Ministry of Education, Culture, Sports, Science and Technology, Japan
- JSPS KAKENHI [JP25107002, JP26706014, JP17K05495, JP18H01889]
- Joint Research Center for Environmentally Conscious Technologies in Materials Science at ZAIKEN, Waseda University [31001]
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We show that boron-doped epitaxial graphene can be successfully grown by thermal decomposition of a boron carbide thin film, which can also be epitaxially grown on a silicon carbide substrate. The interfaces of B4C on SiC and graphene on B4C had a fixed orientation relation, having a local stable structure with no dangling bonds. The first carbon layer on B4C acts as a buffer layer, and the overlaying carbon layers are graphene. Graphene on B4C was highly boron doped, and the hole concentration could be controlled over a wide range of 2 x 10(13) to 2 x 10(15) cm(-2). Highly boron-doped graphene exhibited a spin-glass behavior, which suggests the presence of local antiferromagnetic ordering in the spin-frustration system. Thermal decomposition of carbides holds the promise of being a technique to obtain a new class of wafer-scale functional epitaxial graphene for various applications.
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