4.8 Article

Generation of Tin-Vacancy Centers in Diamond via Shallow Ion Implantation and Subsequent Diamond Overgrowth

Journal

NANO LETTERS
Volume 20, Issue 3, Pages 1614-1619

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b04495

Keywords

diamond color centers; tin-vacancy center; CVD growth; ion implantation

Funding

  1. Army Research Office (ARO) [W911NF-13-1-0309]
  2. National Science Foundation (NSF) RAISE TAQS [1838976]
  3. Air Force Office of Scientific Research (AFOSR) DURIP [FA9550-16-1-0223]
  4. Department of Energy, Basic Energy Sciences (BES)-Materials Science and Engineering
  5. SLAC LDRD
  6. National Defense Science and Engineering Graduate (NDSEG) Fellowship Program - Air Force Research Laboratory (AFRL)
  7. Office of Naval Research (ONR)
  8. Army Research Office (ARO)
  9. Andreas Bechtolsheim Stanford Graduate Fellowship
  10. Microsoft Research Ph.D. Fellowship
  11. National Science Foundation [ECCS-1542152]
  12. Div Of Electrical, Commun & Cyber Sys
  13. Directorate For Engineering [1838976] Funding Source: National Science Foundation

Ask authors/readers for more resources

Group IV color centers in diamond have garnered great interest for their potential as optically active solid-state spin qubits. The future utilization of such emitters requires the development of precise site-controlled emitter generation techniques that are compatible with high-quality nanophotonic devices. This task is more challenging for color centers with large group IV impurity atoms, which are otherwise promising because of their predicted long spin coherence times without a dilution refrigerator. For example, when applied to the negatively charged tin-vacancy (SnV-) center, conventional site-controlled color center generation methods either damage the diamond surface or yield bulk spectra with unexplained features. Here we demonstrate a novel method to generate site-controlled SnV- centers with clean bulk spectra. We shallowly implant Sn ions through a thin implantation mask and subsequently grow a layer of diamond via chemical vapor deposition. This method can be extended to other color centers and integrated with quantum nanophotonic device fabrication.

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