Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 108, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2019.104892
Keywords
Graphitic carbon nitride; Zinc aluminium layer double hydroxide; Solar light; Real effluent; And bandgap energy
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The structural framework of graphitic carbon nitride (g-C3N4) was tuned with Zinc Aluminium layer double hydroxide (ZnAl-LDH), and its photocatalytic activity was investigated through solar light assisted phenol degradation of real effluent. The modified g-C3N4 (70%g-C3N4/ZnAl-LDH) possess more efficient inhibition of electron and hole pairs resulting in red shifting of absorption edge which stimulates the n-pi* electronic transition. Morphological studies confirm that the LDH flocks consistently covered the g-C3N4 sheets affirming a substantial collaboration between two-layered material through electrostatic interlink and charge exchange synergy. Furthermore, 70%g-C3N4/ZnAl-LDH have an increased surface area of 26.292 m(2)/g and a reduced bandgap energy of 2.55 eV, which results in enhanced photocatalytic activity. The results of experimental study indicate that after 300 min of illumination in slight acidic condition, with 1.5 g/L chemical oxidant dose at 3 L/h reactor flowrate, 70%g-C3N4/ZnAl-LDH exhibits 79.35% degradation of phenol, and under same conditions, g-C3N4 confers 61.25% degradation.
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