Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 107, Issue -, Pages -Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2019.104781
Keywords
Silver bismuth sulfide; Compound semiconductors; Structural properties; Optical properties; Surface morphology; XPS analysis
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AgBiS2 has been synthesized using solvothermal method at various growth temperatures of 140 degrees C, 160 degrees C, and 180 degrees C (ABS 1, ABS 2, ABS 3) with EG. In order to enhance the quality of AgBiS2, it has been synthesized and annealed at different temperatures. XRD pattern confirms the formation of cubic phase of AgBiS2 with binary phase of silver sulfide and bismuth sulfide. FESEM micrograph illustrated the grown samples with different morphologies. From UV-DRS spectroscopy, the measured value of optical band gap is 2.92 eV, 2.65 eV and 2.69 eV of ABS 1, ABS 2 and ABS 3 samples respectively. TEM analysis and FTIR spectrum supported the confirmation of AgBiS2 synthesis. XPS analysis confirmed the presence of Ag, Bi and S elements.
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