Article
Chemistry, Multidisciplinary
Jan Hempelmann, Peter C. Mueller, Christina Ertural, Richard Dronskowski
Summary: Layered phase-change materials in the Ge-Sb-Te system exhibit multicenter bonding, which leads to distinct long-range effects in the solid state and explains the metavalent properties as well as the origin of bond-breaking and phase change behavior.
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION
(2022)
Article
Materials Science, Multidisciplinary
Ruobing Wang, Zhitang Song, Wenxiong Song, Tianjiao Xin, Shilong Lv, Sannian Song, Jun Liu
Summary: In this study, we demonstrate a phase-change memory (PCM) based on In0.9Ge2Sb2Te5 (IGST) alloy, which shows improved thermal stability and reliability compared to traditional Ge2Sb2Te5 storage devices. The introduction of In can enhance the nucleation centers of the device, boosting set speed and endurance. Matching stable phase-change octahedrons could be a feasible way to achieve practical PCMs.
Article
Nanoscience & Nanotechnology
A. Portavoce, G. Roland, J. Remondina, M. Descoins, M. Bertoglio, M. Amalraj, P. Eymeoud, D. Dutartre, F. Lorut, M. Putero
Summary: The study investigates atomic redistribution in Ge-Sb-Te (GST)-based memory cells during SET/RESET cycling, proposing the use of a simplified GST system for atomic scale simulations, and discussing the influence of Ge excess on atomic redistribution in GrGST films and GST ternary phase stoichiometry. It suggests that using amorphous layers to control microstructure evolution of films during cycling is an effective approach.
Article
Physics, Applied
Philipp Hans, Cristian Mocuta, Yannick Le-Friec, Philippe Boivin, Roberto Simola, Olivier Thomas
Summary: The crystallization behavior and kinetics of a compositionally optimized, N-doped Ge-rich Ge-Sb-Te alloy (GGST) in the slow crystallization regime were systematically investigated using synchrotron x-ray diffraction (XRD) in situ during heat treatment. The results showed that the crystallization temperature of the alloy had an inverse relationship with the film thickness, and a nucleation-controlled crystallization process occurred in two stages.
JOURNAL OF APPLIED PHYSICS
(2023)
Article
Chemistry, Multidisciplinary
Arun Kumar, Raimondo Cecchini, Claudia Wiemer, Valentina Mussi, Sara De Simone, Raffaella Calarco, Mario Scuderi, Giuseppe Nicotra, Massimo Longo
Summary: Ge-rich Ge-Sb-Te/Sb2Te3 core-shell nanowires were successfully grown by metal-organic chemical vapor deposition, with detailed characterization of their surface morphology, crystalline structure, vibrational properties, and elemental composition achieved through various techniques.
Article
Engineering, Electrical & Electronic
Hatun Cinkaya, Adil Ozturk, Arif Sirri Atilla Hasekioglu, Zahit Evren Kaya, Seref Kalem, Christelle Charpin-Nicolle, Guillaume Bourgeois, Nicolas Guillaume, Marie Claire.Cyrille, Julien Garrione, Gabriele Navarro, Etienne Nowak
Summary: The structural properties of Germanium-Antimony-Tellurium (GST) and Ge-rich GST thin film samples were investigated in this work. The films were studied after annealing at various temperatures, and analysis techniques such as X-Ray Diffraction, FTIR, Raman Spectroscopy, and SEM equipped with EDS were used to study the evolution of the structure in the samples.
SOLID-STATE ELECTRONICS
(2021)
Article
Materials Science, Multidisciplinary
Nikolas Kraft, Guoxiang Wang, Hagen Bryja, Andrea Prager, Jan Griebel, Andriy Lotnyk
Summary: Ge-Sb-Te alloys are promising materials for non-volatile memory applications, and alloying with elements enhances material properties. The nanocomposites GSTO-LSMO show potential for data storage and photonic applications.
MATERIALS & DESIGN
(2021)
Article
Engineering, Electrical & Electronic
Minh Anh Luong, Sijia Ran, Chiara Sabbione, Alain Claverie
Summary: Chalcogenide Ge-Sb-Te alloys are widely used in Phase Change Memories. However, the drift of electrical characteristics and failure in these alloys is caused by the heterogeneous redistribution of elements. Little is known about the relative diffusivities of Ge, Sb, and Te, hindering the modeling and optimization of materials and devices. This study experimentally investigates the thermal diffusion of Ge, Sb, and Te through Ge2Sb2Te5 and finds that Te diffusion can be activated at lower temperatures compared to Ge and Sb, contrary to previous theoretical simulations.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Materials Science, Multidisciplinary
Konstantinos Konstantinou, Stephen R. Elliott
Summary: Understanding charge-trapping defects in amorphous chalcogenide alloy-based phase-change memory materials is crucial for developing high-density multilevel memory devices. Hybrid density-functional theory simulations reveal that extra electrons and holes are spontaneously trapped, forming charge-trapping centers in the bandgap of the amorphous materials. The structural patterns of the charge-trapping sites inside the glassy networks exhibit a range of defective atomic environments. These findings shed light on the intrinsic nature of charge trapping in amorphous Ge-Sb-Te systems and have implications for phase-change electronic-memory devices.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS
(2023)
Article
Materials Science, Multidisciplinary
Hanyi Zhang, Xudong Wang, Wei Zhang
Summary: Chalcogenide phase-change materials have promising applications in non-volatile memory and neuromorphic computing devices. The Ge2Sb2Se4Te1 alloy, a newly developed quaternary alloy, exhibits superior properties in terms of low optical loss and higher thermal stability, making it a suitable candidate for high-performance optical switches and modulators. Ab initio calculations reveal that selenium substitution modifies the local structure and optical response of the amorphous quaternary alloys.
OPTICAL MATERIALS EXPRESS
(2022)
Article
Materials Science, Multidisciplinary
Yu Gan, Naihua Miao, Jian Zhou, Zhimei Sun
Summary: This study reports three new two-dimensional (2D) Ge-Sb-Te compounds with superior stability, suitable electronic properties, and excellent optical performance. These compounds are predicted to have high photovoltaic conversion efficiencies and could serve as a prominent platform for future experimental research and nano-optoelectronic devices.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Chemistry, Multidisciplinary
Peter Zalden, Christine Koch, Melf Paulsen, Marco Esters, David C. Johnson, Matthias Wuttig, Aaron M. Lindenberg, Wolfgang Bensch
Summary: Thin films of (Ge1-xSnx)(8)Sb(2)Te(11) were prepared to investigate the effect of Sn-substitution on properties relevant for phase-change memory. It was found that Sn-substitution can decrease the crystallization temperature and impact the maximum crystallization rate. Ge(8)Sb(2)Te(11) is identified as a promising material for photonics applications due to its higher crystallization temperature compared to common phase-change materials.
ADVANCED FUNCTIONAL MATERIALS
(2021)
Article
Materials Science, Ceramics
A. Piarristeguy, M. Micoulaut, R. Escalier, G. Silly, M. -V. Coulet, A. Pradel
Summary: Thermal co-evaporation techniques were used to obtain various glassy compositions along the GexSbxTe100-2x join in the ternary Ge-Sb-Te system, showing weak variation of T-g with composition x. Preferential formation of Te-Sb-Te was observed, contrary to isochemical compounds like Ge-Sb-Se. The data were discussed within the framework of topological based approaches, indicating optimal glass formation for compositions satisfying the Maxwell stability criterion and a flexible to rigid transition at x = 8.5%.
JOURNAL OF NON-CRYSTALLINE SOLIDS
(2021)
Article
Chemistry, Physical
Jin Zhao, Zhenhui Yuan, Xiaodan Li, Wen-Xiong Song, Zhitang Song
Summary: This study investigates Er-alloyed Sb/Te binary materials and finds that they exhibit high-speed writing capability. The impurity Er enhances the ability to form amorphous structures in Sb/Te, thereby improving device performance.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Multidisciplinary
Adriano Diaz Fattorini, Caroline Cheze, Inaki Lopez Garcia, Christian Petrucci, Marco Bertelli, Flavia Righi Riva, Simone Prili, Stefania M. S. Privitera, Marzia Buscema, Antonella Sciuto, Salvatore Di Franco, Giuseppe D'Arrigo, Massimo Longo, Sara De Simone, Valentina Mussi, Ernesto Placidi, Marie-Claire Cyrille, Nguyet-Phuong Tran, Raffaella Calarco, Fabrizio Arciprete
Summary: In this study, a Ge-rich Ge-Sb-Te alloy was deposited on silicon substrates using physical vapor deposition. The electronic properties of the alloy were investigated, and it was found to have similar electrical parameters to conventional alloys but with enhanced thermal stability.