4.6 Article

Photoresponse of wafer-scale palladium diselenide films prepared by selenization method

Journal

JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 53, Issue 6, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1361-6463/ab57a8

Keywords

palladium diselenide; 2D layered material; photodetection; field effect transistors

Funding

  1. Hong Kong PhD Fellowships scheme
  2. Hong Kong Polytechnic University [1-ZVGH]

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Palladium diselenide (PdSe2) films exhibit a high charge carrier mobility and sensitivity in photodetection. In this work, wafer-scale PdSe2 thin films with controllable thickness have been synthesized by the selenization of Pd films. A PdSe2-based photodetector can detect a broad wavelength ranging from 420 nm to 1200 nm. The responsivity and detectivity can reach 1.96 x 10(3) A W-1 and 1.72 x 10(10) W Hz(-1/2) at V-SD = 3 V, respectively. The figure of merit of the photodetection are comparable to the mechanically exfoliated PdSe2 based photodetector. This work demonstrated that selenization is a facile method to synthesize PdSe2 films in large scale and the films are promising for broadband photodetection.

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