Journal
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
Volume 11, Issue 5, Pages 1859-1866Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acs.jpclett.0c00187
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Funding
- National Natural Science Foundation of China [51902012, 51532001, 21875008]
- China Postdoctoral Science Foundation [2019T120037, 2018M631304, 2019T120534, 2018M640576]
- Zhejiang Province [LQ20E020003]
- Natural Science Foundation of Ningbo [2019A610024]
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Enriching the electronic density of states (DOS) of semiconductors is the key to promoting charge transfer (CT) and achieving a large surface-enhanced Raman scattering (SERS) enhancement. Metal hydroxide semiconductors are anticipated to exhibit DOS that are higher than those of metal oxide because of their abundant 0 atoms; however, their SERS activity has not been verified. Here, combining density functional theory and experiments, we report a SERS sensitivity of amorphous Zn(OH)(2) [a-Zn(OH)(2)] that is much higher than that of amorphous ZnO (a-ZnO), ascribed to the abundant 0 atoms and hence enriched O 2p state density near the Fermi level in a-Zn(OH)(2), which gives rise to higher CT probabilities. Moreover, we find a-Zn(OH)(2) exhibits significant advantages in energy-level matching over a-ZnO for efficient photoinduced CT via strong vibronic coupling, ascribed to the upshifted valence band maximum and the narrower band gap of a-Zn(OH)(2). Via the synthesis of a-Zn(OH)(2) nanocages, an ultrahigh enhancement factor of 1.29 x 10(6) is obtained in semiconductor-based SERS.
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