Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 59, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.35848/1347-4065/ab7c94
Keywords
Solar cell; Cu(In; Ga)Se-2; Cu-deficient layer; three-stage co-evaporation process; electron beam induced current
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Funding
- New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry
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The effects of deposition time of the second stage (t(2nd)) and the third stage (t(3rd)) during the three-stage process on the formation of Cu-deficient layers (CDLs) at Cu(In,Ga)Se-2 (CIGS) near-surface were investigated in this study. The experimental findings suggested that the CDL was thickened by a longer deposition time in the third stage. Also, the device performance was found to deteriorate with the increased thickness of CDLs, suggesting that the CDL has a defect concentration higher than that of CIGS thin films. Furthermore, the peak position of electron beam induced current signal was shifted towards the interior region of CIGS films, confirming the n-type conductivity of CDLs. The highest conversion efficiency of 19.0% was obtained in this work when the thickness of CDL was 80 nm.
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