Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe2 Channel Grown by Molecular Beam Epitaxy

Published 2020 View Full Article

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Title
Large-Scale Fabrication of Submicrometer-Gate-Length MOSFETs With a Trilayer PtSe2 Channel Grown by Molecular Beam Epitaxy
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 3, Pages 796-801
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-02-22
DOI
10.1109/ted.2020.2966434

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