Effect of Seed Layer on Gate-All-Around Poly-Si Nanowire Negative-Capacitance FETs With MFMIS and MFIS Structures: Planar Capacitors to 3-D FETs

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Title
Effect of Seed Layer on Gate-All-Around Poly-Si Nanowire Negative-Capacitance FETs With MFMIS and MFIS Structures: Planar Capacitors to 3-D FETs
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 67, Issue 2, Pages 711-716
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2020-01-08
DOI
10.1109/ted.2019.2958350

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