Review
Chemistry, Multidisciplinary
Zheng Wang, Yan Cai, Haitao Jiang, Ziao Tian, Zengfeng Di
Summary: This article provides a comprehensive review on graphene-based silicon photonic devices and their applications in optical interconnects. Silicon photonics has the ability to integrate multiple core functions of optical interconnects into small-scale chips, offering cost-effective and scalable manufacturing capabilities. Graphene has emerged as a promising solution for traditional silicon photonics due to its exceptional electrical and optical properties, enabling pure phase modulation and ultrafast photodetection.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Anthony Rizzo, Stuart Daudlin, Asher Novick, Aneek James, Vignesh Gopal, Vaishnavi Murthy, Qixiang Cheng, Bok Young Kim, Xingchen Ji, Yoshitomo Okawachi, Matthew van Niekerk, Venkatesh Deenadayalan, Gerald Leake, Michael Fanto, Stefan Preble, Michal Lipson, Alexander Gaeta, Keren Bergman
Summary: Silicon photonics has great potential in improving optical interconnects in data centers and high performance computers, enabling higher transmission rates and lower energy consumption. This study reviews recent progress in silicon photonic interconnects, with a focus on chip-scale Kerr frequency comb sources, and provides a comprehensive overview of scalable silicon photonic systems. Experimental results demonstrate the feasibility of volume manufacturing for this technology.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2023)
Article
Physics, Multidisciplinary
Ying Zhu, Liming Wang, Zhiqiang Li, Ruitao Wen, Guangrui Xia
Summary: This study investigates the modulation responses of Fabry-Perot Ge-on-Si lasers through modeling and simulations. The relationship between the 3 dB bandwidth and structure parameters such as poly-Si cladding thickness, Ge cavity width and thickness, and minority carrier lifetime is studied. It is predicted that after optimizing the Ge laser structure with a defect limited carrier lifetime of 1 ns, a 3 dB bandwidth of 33.94 GHz can be achieved at a biasing current of 270.5 mA. The simulated eye diagrams show a stable eye-opening window at 20 Gb/s NRZ. Improving the minority carrier lifetime to 10 ns would reduce the threshold current to 6.85 mA and increase the 3 dB bandwidth to 36.89 GHz.
Article
Engineering, Electrical & Electronic
Erfan M. Fard, Soha Namnabat, Stephanie Arouh, Robert A. Norwood, Stanley Pau, Nasser Peyghambarian
Summary: A design of an adiabatic silicon nitride taper to polymer waveguide coupler is presented in this study, showing high misalignment tolerance and low coupling loss.
IEEE PHOTONICS TECHNOLOGY LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Rongxiang Guo, Weicheng Chen, Haoran Gao, Yang Zhao, Tiegen Liu, Zhenzhou Cheng
Summary: This study proposes the feasibility of developing mid-infrared Ge-based Kerr frequency combs, and analyzes their physical properties and generation mechanisms by establishing a comprehensive model. The study also demonstrates the conditions for generating frequency combs at specific pump wavelengths. This research provides useful guidance for the development of mid-IR Kerr frequency combs using CMOS technology.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2022)
Article
Chemistry, Analytical
Junchao Zhou, Diana Al Husseini, Junyan Li, Zhihai Lin, Svetlana Sukhishvili, Gerard L. Cote, Ricardo Gutierrez-Osuna, Pao Tai Lin
Summary: Chip-scale infrared spectrometers consisting of a microring resonator array were developed for volatile organic compound detection. The spectrometers can perform multiwavelength mid-infrared sensing, enabling high specificity and compact design.
ANALYTICAL CHEMISTRY
(2022)
Article
Engineering, Electrical & Electronic
Michael Oehme, Mathias Kaschel, Steffen Epple, Maurice Wanitzek, Zili Yu, Daniel Schwarz, Ann-Christin Kollner, Joachim N. Burghartz, Jorg Schulze
Summary: This paper presents a near-infrared Ge-on-Si camera with backside illumination, showcasing high fill-factor and linear photocurrent characteristics. By operating the Ge-on-Si detectors under zero bias, dark current is minimized and high signal-to-noise ratio and optical responsivity are achieved.
IEEE SENSORS JOURNAL
(2021)
Article
Nanoscience & Nanotechnology
Camila Ianhez-Pereira, Ariano De Giovanni Rodrigues, Marcio Peron Franco de Godoy
Summary: This study investigated the infrared optical emission of Er3+ doped ZnO hosts, using spray pyrolysis during thin film growth. Different molarity conditions affected the growth of the films and their optical properties. The infrared emissions were influenced by the Stark effect, which was dependent on synthesis parameters.
SCRIPTA MATERIALIA
(2021)
Article
Engineering, Electrical & Electronic
Yuyang Wang, Peng Sun, Jared Hulme, M. Ashkan Seyedi, Marco Fiorentino, Raymond G. Beausoleil, Kwang-Ting Cheng
Summary: In this study, a transceiver grouping algorithm is proposed to assemble communication networks from a pool of fabricated transceivers, aiming to optimize both network energy efficiency and yield. Experimental results demonstrate that optimized grouping significantly improves network energy efficiency and yield compared to randomly grouping the transceivers.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2021)
Article
Materials Science, Multidisciplinary
Yuewen Gao, Yu Gu, Toshiaki Iitaka, Zhi Li
Summary: It is discovered that semiconductors synthesized under high pressure, such as MgSiN2, SrSiN2, and BaSiN2, can exhibit a large bandgap and high linear electro-optic coefficient due to the enhanced valence bond strength. The research demonstrates the feasibility of enhancing the linear electro-optic coefficient through high-pressure treatment.
Article
Engineering, Electrical & Electronic
Ismael Charlet, Yohan Desieres, Delphine Marris-Morini, Frederic Boeuf
Summary: This paper presents a model for optimizing capacitive modulators using full-Si or with a thin layer of strained SiGe, along with an optimization algorithm to estimate the highest optimal modulation amplitude for different operating frequencies.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS
(2021)
Article
Optics
Alec M. Hammond, Joel B. Slaby, Michael J. Probst, Stephen E. Ralph
Summary: Density-based topology optimization is utilized to design large-scale, multi-layer grating couplers that comply with commercial foundry fabrication constraints while providing efficient coupling to a single-mode optical fiber without additional optics.
Article
Materials Science, Multidisciplinary
Sang-Ho Shin, Yikai Liao, Bongkwon Son, Zhi-Jun Zhao, Jun-Ho Jeong, Chuan Seng Tan, Munho Kim
Summary: This research demonstrates a high-quality Ge inverted pyramid array fabricated by HF-free metal-assisted chemical etching, showing excellent preservation of single crystallinity and antireflection performance, which offers an outstanding platform for future mid-infrared photonics and optoelectronics applications.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Engineering, Electrical & Electronic
Francesco Testa, Mark T. Wade, Mikael Lostedt, Fabio Cavaliere, Marco Romagnoli, Vladimir Stojanovic
Summary: The paper provides an overview of future advanced antenna systems for 5G and 6G wireless networks, focusing on increasing data rate, reducing latency and power consumption. This will be achieved through the utilization of millimeter wave frequency bands and massive multiple-input multiple-output antenna technology. Advanced antenna systems based on arrays of several hundreds of antenna elements are being developed to manage front haul throughput effectively.
JOURNAL OF LIGHTWAVE TECHNOLOGY
(2022)
Article
Engineering, Electrical & Electronic
Landen D. Ryder, Kaitlyn L. Ryder, Andrew L. Sternberg, John A. Kozub, En Xia Zhang, Dimitri Linten, Kristof Croes, Robert A. Weller, Ronald D. Schrimpf, Sharon M. Weiss, Robert A. Reed
Summary: This study conducted pulsed-laser-induced single-event current measurements on waveguide-integrated germanium photodiodes with different geometries to examine the impact of photodiode geometry on transient response. Results showed that photodiodes with different shapes exhibit differences in transient response duration, which can help identify the relationship between device dimensions and transient response.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
R. Loo, C. Porret, H. Han, A. Srinivasan, E. Vecchio, V Depauw
Summary: Two new templates for strain-relaxed detachable Ge are introduced, based on SiON and GeON platforms. Both templates can be used for novel device applications, with GeON being attractive for optical devices manufacturing.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2021)
Article
Chemistry, Multidisciplinary
Philipp Hoenicke, Yves Kayser, Konstantin Nikolaev, Victor Soltwisch, Jeroen E. Scheerder, Claudia Fleischmann, Thomas Siefke, Anna Andrle, Grzegorz Gwalt, Frank Siewert, Jeffrey Davis, Martin Huth, Anabela Veloso, Roger Loo, Dieter Skroblin, Michael Steinert, Andreas Undisz, Markus Rettenmayr, Burkhard Beckhoff
Summary: The complexity of 3D structures used in nanotechnologies today has surpassed the capabilities of existing metrology techniques for process development and control. The grazing exit X-ray fluorescence technique allows for simultaneous characterization of nanostructures with sub-nm discrimination capabilities, without the need for access to large-scale research facilities.
Article
Materials Science, Multidisciplinary
Gianluca Rengo, Clement Porret, Andriy Hikavyy, Erik Rosseel, Mustafa Ayyad, Richard J. H. Morris, Rami Khazaka, Roger Loo, Andre Vantomme
Summary: This work discusses the properties of in situ Ga and B co-doped Si0.55Ge0.45 layers. The study shows that post-epi surface cleans are necessary to obtain accurate Ga profiles, and the morphologies, crystalline quality, and electrical properties of the layers degrade with increasing Ga dose.
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
(2022)
Article
Physics, Applied
Charles Fletcher, Michael P. Moody, Claudia Fleischmann, Masoud Dialameh, Clement Porret, Brian Geiser, Daniel Haley
Summary: The authors proposed a new reconstruction protocol in atom probe tomography to correct image distortions for multiphase materials. By applying this new algorithm to experimental semiconductor multilayer systems and fin field-effect transistor devices, a significant reduction in multiphase image distortions was demonstrated. The method could also be used for testing and validating new developments in field evaporation theory by quantitatively comparing model predictions with experimental results.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Engineering, Electrical & Electronic
Gaspard Hiblot, Taras Ravsher, Roger Loo, Bhuvaneshwari Yengula Venkata Ramana, Yann Canvel, Nathali Franchina Vergel, Andrea Fantini, Shamin Houshmand Sharifi, Nina Bazzazian, Mustafa Ayyad, Alex Merkulov, Gouri Sankar Kar, Sebastien Couet
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Engineering, Electrical & Electronic
A. Veloso, A. Jourdain, D. Radisic, R. Chen, G. Arutchelvan, B. O'Sullivan, H. Arimura, M. Stucchi, A. De Keersgieter, M. Hosseini, T. Hopf, K. D'have, S. Wang, E. Dupuy, G. Mannaert, K. Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Y. Oniki, X. Zhou, A. Gupta, T. Schram, B. Briggs, C. Lorant, E. Rosseel, A. Hikavyy, R. Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, K. Devriendt, B. T. Chan, S. Demuynck, G. Hiblot, G. Van der Plas, J. Ryckaert, G. Beyer, E. Dentoni Litta, E. Beyne, N. Horiguchi
Summary: We present a novel routing scheme for scaled finFETs using buried power rails, which ensures tight variability and matching control. By moving the power delivery network to the backside metal level, we can alleviate routing congestion and significantly reduce IR drop values.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Physics, Applied
Clement Porret, Gianluca Rengo, Mustafa Ayyad, Andriy Hikavyy, Erik Rosseel, Robert Langer, Roger Loo
Summary: The characteristics and physical properties of gallium-doped (Ge:Ga) and gallium and boron co-doped germanium (Ge:Ga:B) epilayers grown at low temperature (320 degrees C) by chemical vapor deposition are investigated and compared with boron-doped (Ge:B) germanium. Ge:Ga films with resistivities <0.3 m omega.cm outperform Ge:B films prepared using a similar method. A selective Ge:Ga growth process based on a cyclic deposition and etch routine is developed and applied to fin structures, demonstrating full process selectivity towards nitride and oxide surfaces. However, the reduction in Ga incorporation in the selective growth process leads to a degradation of electrical performance. Ti/Ge:Ga(:B) contacts are evaluated to provide new solutions for advanced Ge-based devices.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2023)
Article
Energy & Fuels
Valerie Depauw, Clement Porret, Myriam Moelants, Emma Vecchio, Koen Kennes, Han Han, Roger Loo, Jinyoun Cho, Guillaume Courtois, Rufi Kurstjens, Kristof Dessein, Victor Orejuela, Clara Sanchez-Perez, Ignacio Rey-Stolle, Ivan Garcia
Summary: The study focuses on upscaling the Ge lift-off concept by fabricating large-sized Ge foils as III-V epitaxy seed and support substrates, proving that porous germanium is a more sustainable alternative for multijunction solar cell processes.
PROGRESS IN PHOTOVOLTAICS
(2022)
Proceedings Paper
Engineering, Multidisciplinary
Philipp Hoenicke, Yves Kayser, Victor Soltwisch, Andre Waehlish, Nils Wauschkuhn, Jeroen E. Scheerder, Claudia Fleischmann, Janusz Bogdanowicz, Anne-Laure Charley, Anabela Veloso, Roger Loo, Hans Mertens, Andriy Hikavyy, Thomas Siefke, Anna Andrle, Grzegorz Gwalt, Frank Siewert, Richard Ciesielski, Burkhard Beckhoff
Summary: X-ray fluorescence techniques in special operation modes can provide valuable quantitative insights for semiconductor related applications and can be made compatible to typical sizes of homogeneously structured metrology pads. By using small excitation beams, it can be ensured that no adjacent regions are irradiated or that no X-ray fluorescence radiation from adjacent areas reaches the detector, allowing for a multitude of information retrieval from XRF data. In addition to elemental composition and sensitivity to sub-surface features, quantitative amounts of material and even dimensional properties of the nanostructures under study can be derived.
METROLOGY, INSPECTION, AND PROCESS CONTROL XXXVII
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
C. Porret, J. L. Everaert, M. Schaekers, L. A. Ragnarsson, A. Hikavyy, E. Rosseel, G. Rengo, R. Loo, R. Khazaka, M. Givens, X. Piao, S. Mertens, N. Heylen, H. Mertens, C. Toledo de Carvalho Cavalcante, G. Sterckx, S. Brus, A. Nalin Mehta, M. Korytov, D. Batuk, P. Favia, R. Langer, G. Pourtois, J. Swerts, E. Dentoni Litta, N. Horiguchi
Summary: Low temperature Si1-xGex source-drain epitaxy processes can alleviate access resistance issues in modern logic devices by utilizing specific stack structures. Among the different systems investigated, TiN / W metal-to-metal interfaces demonstrate low contact resistivity, while Sc / Si:P stacks exhibit improved performance. Analysis of the Sc / Si:P stacks reveals the material properties and reaction mechanisms responsible for the reduction in contact resistivity.
2022 INTERNATIONAL ELECTRON DEVICES MEETING, IEDM
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
S. A. Srinivasan, C. Porret, S. Balakrishnan, Y. Ban, R. Loo, P. Verheyen, J. Van Campenhout, M. Pantouvaki
Summary: This study presents an O-band GeSi quantum-confined Stark effect waveguide-coupled electro-absorption modulator with a bandwidth of 50GHz, demonstrating a static extinction ratio of 5.2dB, insertion loss of 7.6dB, and operation at 60Gb/s NRZ-OOK for a 2V swing.
2021 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC)
(2021)
Proceedings Paper
Energy & Fuels
Rufi Kurstjens, Guillaume Courtois, Jinyoun Cho, Kristof Dessein, Ivan Garcia, Ignacio Rey-Stolle, Carlos Algora, Valerie Depauw, Clement Porret, Roger Loo
Summary: The Umicore Ge-on-Ge engineered substrate concept involves a thin epi-ready germanium foil weakly attached to a bulk germanium mother substrate, allowing for easy detachment and multiple re-uses. III-V layers were successfully grown and characterized on these substrates, along with the fabrication and characterization of GaInP single junction devices. The similar performance of Ge-on-Ge as an epi-template to bulk Ge was demonstrated by the unaffected V-oc of the solar cells.
2021 IEEE 48TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)
(2021)
