Effect of Al2O3 deposition on carrier mobility and ambient stability of few-layer MoS2 field effect transistors

Title
Effect of Al2O3 deposition on carrier mobility and ambient stability of few-layer MoS2 field effect transistors
Authors
Keywords
-
Journal
CURRENT APPLIED PHYSICS
Volume 20, Issue 2, Pages 363-365
Publisher
Elsevier BV
Online
2019-12-19
DOI
10.1016/j.cap.2019.12.002

Ask authors/readers for more resources

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Add your recorded webinar

Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.

Upload Now