Journal
CHEMICAL PHYSICS LETTERS
Volume 746, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.cplett.2020.137308
Keywords
Ga2O3; Co-doping; Transition level; Conductivity; First-principle calculations
Funding
- Natural Science Foundation of China [21573037, 21873017, 11704062, 51732003]
- Postdoctoral Science Foundation of China [2013M541283]
- Natural Science Foundation of Jilin Province [20190201231JC]
- Fundamental Research Funds for the Central Universities [2412017QD006]
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The lack of p-type Ga2O3 limits its application for optoelectronic devices. Although nitrogen is a common acceptor dopant for oxides, the presence of midgap level, induced by N doping, impairs its p-type conductivity. We propose that Al/In-N co-doping is an effective way to obtain high-conductivity p-type Ga2O3. First-principles calculations reveal that Al-N co-doping exhibits lower defect formation energy and shallower transition level than that of N mono-doping. In-N can further reduce the depth of transition level, corresponding to a higher carrier concentration. More interestingly, enhancing the ratio of N in In-N co-doping, in a greater extent, elevates the p-type conductivity.
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