Journal
APPLIED SURFACE SCIENCE
Volume 499, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.apsusc.2019.143932
Keywords
Layered bi-transition metal chalcogenides; CuTaS3; Density functional theory (DFT); Electronic transport; Phototransistor
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Funding
- National Key Research and Development Program of China [2017YFA0402902]
- National Natural Science Foundation Committee of China Academy of Engineering Physics (NSAF) [U1630108]
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Two-dimensional layered bi-transition metal chalcogenides with exotic physical and optoelectronic properties are becoming attractive and promising candidates for next-generation electronics and optoelectronics. Herein, we report a representative of bi-transition metal sulfide, the strip-shaped CuTaS3 crystal, analyzing its intrinsic electrical transport properties and potential optoelectronic applications by fabricating CuTaS3-based devices. The time-resolved Terahertz (THz) spectroscopy (TRTS) results indicate a rapid quenching of photoconductivity in CuTaS3 bulk within 4.1 ps photoexcitation. PL measurement and CuTaS3-based field effect transistors (FETs) show a typical n-type semiconducting behavior with a small, direct bandgap of 1.24 eV. Density functional theory (DFT) calculations reveal charge transfers between different atoms and phonon dispersion relations to help understand the structural and vibrational properties of CuTaS3. A CuTaS3-based-phototransistor was demonstrated with a responsivity of 7.6 mA W-1 and fast photoresponse time of 0.3-0.4 s, as well as excellent photoswitching stability. Our results may pave the way for developing other layered bi-transition metal chalcogenides and implementations in electronic and optoelectronic applications.
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