4.6 Article

Defect proliferation in CsPbBr3 crystal induced by ion migration

Journal

APPLIED PHYSICS LETTERS
Volume 116, Issue 6, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.5134108

Keywords

-

Funding

  1. National Natural Science Foundation of China [11974163, 51702132, 51802262]
  2. National Key Research and Development Program of China [2016YFA0201104]
  3. Natural Science Basic Research Plan in Shaanxi Province of China [2019ZDLGY04]
  4. Natural Science Foundation of Shaanxi Province [2019JQ-459]
  5. Fundamental Research Funds for the Central Universities [3102019TS0408]

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Ion migration in halide perovskite materials usually brings an intractable problem in the working stability of solar cells and photoelectrical detectors. The mechanism of ion migration and its impact on physical properties are still open questions. In this work, the ion migration behavior in solution-grown CsPbBr3 crystals was observed by the hysteresis in current-voltage curves and the temperature dependent reversed current-time measurements. Defect proliferation phenomena (new defects of [V-Cs](-) and [Pb-Br](2+)) originating from ion migration were verified by thermally stimulated current spectroscopy. Our results also give evidence that Cs+ ions also participate in the process of ion migration except the widely considered Br- ions. Furthermore, the photoelectric properties of the CsPbBr3 device were found to be seriously deteriorated after the ion migration. Our work demonstrates the strong correlation between the ion migration and physical properties in halide perovskites.

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