Journal
APPLIED PHYSICS LETTERS
Volume 116, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5139571
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Funding
- Ministerio deCiencia, Innovacion y Universidades of Spain [MAT2016-76892-C3-1-R]
- VDI/VD Innovation thorn Technik GmbH
- SAOT - German Research Foundation (DFG)
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Potentiostatic impedance spectroscopy (IS) is a well-known tool for characterization of materials and electronic devices. It can be complemented by numerical simulation strategies relying on drift-diffusion equations without any equivalent circuit-based assumptions. This implies the time-dependent solutions of the transport equations under small perturbation of the external bias applied as a boundary condition at the electrodes. However, in the case of photosensitive devices, a small light perturbation modulates the generation rate along the absorber bulk. This work then approaches a set of analytical solutions for the signals of IS and intensity modulated photocurrent and photovoltage spectroscopies, intensity modulated photocurrent spectroscopy (IMPS) and intensity modulated photovoltage spectroscopy (IMVS), respectively, from one-sided p-n junction solar cells at the open-circuit. Subsequently, a photoimpedance signal named light intensity modulated impedance spectroscopy (LIMIS =IMVS/IMPS) is analytically simulated, and its difference with respect to IS suggests a correlation with the surface charge carrier recombination velocity. This is an illustrative result and the starting point for future more realistic numerical simulations.
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