Article
Chemistry, Multidisciplinary
Zhixiang Gao, Xin Ju, Haizhong Zhang, Xiaohan Liu, Hongyu Chen, Wanfa Li, Hongliang Zhang, Lingyan Liang, Hongtao Cao
Summary: This study introduces a bioinspired vision sensor based on InP quantum dots (QDs)/InSnZnO hybrid phototransistors, which exhibit exceptional gate controllability and a robust visible-light response. The phototransistor array successfully replicates the adaptation recognition behaviors of the human retina and achieves an impressive 93% accuracy for digit recognition. These findings contribute to the advancement of bionic neuromorphic chips and offer promising opportunities for future developments in the bioinspired visual system.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Zhenfa Wu, Peng Shi, Ruofei Xing, Yuzhi Xing, Yufeng Ge, Lin Wei, Dong Wang, Le Zhao, Shishen Yan, Yanxue Chen
Summary: In this work, a large-area α-MoO3 thin film was fabricated by magnetron sputtering, and an all-solid-state synaptic transistor was designed and manufactured based on this film. The α-MoO3 channel exhibits reversible conductance modulation through proton intercalation/deintercalation, and various synaptic behaviors and multilevel data storage were demonstrated. A three-layer artificial neural network constructed on this synaptic transistor achieved high recognition accuracy in supervised pattern recognition.
Article
Physics, Applied
Xinxiu Wu, Zeyang Li, Xiao Yi, Caihong Jia, Weifeng Zhang
Summary: This study simulates electronic synapses based on the SIO epitaxial film with introducing a ferroelectric PZT layer, and demonstrates multiple important synaptic plasticity functions under electrical stimulation. The PZT/SIO/NSTO device exhibits larger synaptic weight and dynamic range of conductance compared to the SIO/NSTO device, and requires fewer training pulses, which is attributed to the enhanced modulation of the SIO/NSTO interface barrier by the polarization field. This research contributes significantly to efficient and fast information transmission in neuromorphic computing.
APPLIED PHYSICS LETTERS
(2023)
Article
Chemistry, Multidisciplinary
Xin Wang, Yang Lu, Junyao Zhang, Shiqi Zhang, Tianqi Chen, Qingqing Ou, Jia Huang
Summary: This study demonstrates optoelectronic synaptic transistors based on stable TPP, showing high photosensitivity and tunable synaptic plasticity, with potential in the development of artificial visual systems.
Review
Chemistry, Multidisciplinary
Ik-Jyae Kim, Jang-Sik Lee
Summary: This review summarizes the recent developments in ferroelectric devices, particularly ferroelectric transistors, for next-generation memory and neuromorphic applications. It first reviews the types and operation mechanisms of ferroelectric memories, then discusses the issues limiting the realization of high-performance ferroelectric transistors and possible solutions. It also reviews the experimental demonstration of ferroelectric transistor arrays, including 3D ferroelectric NAND and its operation characteristics, and outlines the challenges and strategies towards the development of next-generation memory and neuromorphic applications based on ferroelectric transistors.
ADVANCED MATERIALS
(2023)
Article
Chemistry, Multidisciplinary
Yitong Chen, Dingwei Li, Huihui Ren, Yingjie Tang, Kun Liang, Yan Wang, Fanfan Li, Chunyan Song, Jiaqi Guan, Zhong Chen, Xingyu Lu, Guangwei Xu, Wenbin Li, Shi Liu, Bowen Zhu
Summary: This work presents the development of a polarized switch synaptic memtransistor based on a two-dimensional ferroelectric semiconductor α-In2Se3, which exhibits high accuracy and synaptic characteristics, providing new opportunities for neuromorphic computing.
Article
Physics, Condensed Matter
C. Figueroa, M. Villafuerte, B. Straube, J. Ferreyra, C. Navarro, V. Runco Leal, G. Bridoux
Summary: Time-dependent photoconductivity and PC spectra were investigated in oxygen deficient BaSnO3 thin films grown on different substrates. The films were epitaxially grown on MgO and SrTiO3 substrates, with the latter being compressively strained in the plane. The electrical conductivity in dark increased by one order of magnitude for the films on SrTiO3 compared to MgO, leading to a significant increase in PC. PC spectra revealed a direct band gap of E-G = 3.9, while the film on SrTiO3 exhibited more defects due to strain, which could explain the differential transition values obtained for both films.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2023)
Article
Chemistry, Multidisciplinary
Taebin Lim, Suhui Lee, Jiseob Lee, HyungJin Choi, Byunglib Jung, SeungHyub Baek, Jin Jang
Summary: Artificial synapses are an essential element in neuromorphic computing systems. This study presents the development of a coplanar synaptic thin-film transistor using crystalline indium gallium tin oxide. The device demonstrates important biological synaptic behaviors and utilizes a new mechanism involving positively charged oxygen vacancies. Unlike previous reports, this device allows for the use of conventional gate insulators, making it a suitable candidate for highly integrated neuromorphic chips.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
Ding-Guo Zhang, Xu Gao, Wei Tang, Ya-Nan Zhong, Jian-Long Xu, Sui-Dong Wang
Summary: This study demonstrates the potential of a type of ferroelectric polymer thin-film memristors in emulating synaptic plasticity. The device's memristive characteristics are derived from the asymmetrical design of top electrodes capacitively coupled with a floating bottom electrode, allowing for local modulation of ferroelectric polarization in the ferroelectric terpolymer film. Basic synaptic functions, such as continuous increase/decrease in synaptic weight and paired-pulse facilitation, are successfully emulated using these ferroelectric polymer memristors. This research provides a promising approach to implementing ferroelectric mechanisms in electronic synapses.
APPLIED PHYSICS EXPRESS
(2022)
Article
Chemistry, Multidisciplinary
Dongfan Li, Ning An, Kai Tan, Yurong Ren, Hong Wang, Shengtao Li, Qian Deng, Jianwei Song, Laju Bu, Guanghao Lu
Summary: The conversion of the n-type semiconductor C-8-PTCDI into C-8-PTCDI (D) electrets enhances the charge density and trap energy level, resulting in lower operation voltage and energy consumption of devices based on n-type electrets.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Physics, Applied
Dongliang Jiang, Jun Li, Linkang Li, Wenhui Fu, Qi Chen, Yaohua Yang, Jianhua Zhang
Summary: In this study, ZrLiO/InLiO thin-film transistors were fabricated using a water-based solution route, showing excellent multi-functional synaptic characteristics. The Li-ion doping strategy in the synaptic TFTs promotes the formation of electric-double-layers and increases the number of oxygen vacancies, enhancing the device's sensitivity to optical signals and enabling brain-like learning and memory abilities.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2021)
Article
Chemistry, Physical
Guanglong Ding, Su-Ting Han, Chi-Ching Kuo, Vellaisamy A. L. Roy, Ye Zhou
Summary: Porphyrin-based metal-organic frameworks (PP-MOFs) have attracted increasing attention in the field of neuromorphic electronics due to their superior optoelectronic characteristics, the ability to form 2D layered structure, and customizability. However, the related application research is in the initial stage, demanding a timely summary and guidance. This article highlights the PP-MOFs fabrication shift, from powder synthesis to high-quality film preparation, and introduces the advances and challenges in neuromorphic electronics, aiming to attract experts from various areas and promote the application of PP-MOFs.
Review
Chemistry, Multidisciplinary
Anzhi Yan, Chunlin Wang, Jianlan Yan, Zhenze Wang, Enyi Zhang, Yu Dong, Zhao-Yi Yan, Tian Lu, Tianrui Cui, Ding Li, Penghui Shen, Yuxin Jin, Houfang Liu, Yi Yang, Tian-Ling Ren
Summary: This article focuses on the potential development trends and bottlenecks of high-performance thin-film transistor integrated circuits (TFT ICs), exploring their structure, performance evaluation, and advantages over silicon-based chips. The use of hydrogenated amorphous silicon, low-temperature polycrystalline silicon, and amorphous oxide semiconductors in TFT ICs is discussed, as well as the potential of emerging low-dimensional materials as channel materials.
ADVANCED FUNCTIONAL MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Hao Liu, Xiaoliang Zhou, Changhui Fan, Jie Chen, Lei Lu, Hang Zhou, Shengdong Zhang
Summary: Amorphous InZnO (a-IZO) thin film transistors (TFT) exhibit high sensitivity to green or shorter wavelength light and can be used as photosensors. However, the persistent photoconduction (PPC) phenomenon in a-IZO TFT limits its application as a photosensor, resulting in severe threshold voltage shift and low response speed. By employing a dual-gate transistor architecture and dual-gate pulses configuration, the PPC of a-IZO TFT is completely eliminated.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Biswajit Das, Sungpyo Baek, Jingjie Niu, Cheolhwa Jang, Yoonmyung Lee, Sungjoo Lee
Summary: This paper proposes a ferroelectric heterostructure-based artificial visual system and demonstrates its potential applications in recognizing, memorizing, and processing optical signals. By combined control of electrical and optical signals, the device can function like a retina-inspired vision system with a wide wavelength range and low incident light detection capability.
Article
Nanoscience & Nanotechnology
Youngjun Park, Jang-Sik Lee
Summary: Organic-inorganic halide perovskites (OIHPs), especially stable two-dimensional Dion-Jacobson OIHPs, have shown great potential in resistive switching memory (RSM). The grain sizes of OIHP can be effectively controlled to modulate the paths for ion migration, thus changing the on/off ratio of RSM. In high-density memory applications, selector devices are necessary to suppress leakage current from neighboring cells. These findings highlight the potential of OIHP for use in high-density memory applications.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Chemistry, Multidisciplinary
Dongshin Kim, Jang-Sik Lee
Summary: Neurotransmitters play a crucial role in controlling signal transmission in the nervous system, and the balance between excitatory and inhibitory synaptic responses is fundamental for the characteristics of the nervous system. This study develops artificial synapses that emulate the excitatory and inhibitory functions of biological synapses, paving the way for bio-realistic neuromorphic devices.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Akshay Sahota, Harrison Sejoon Kim, Jaidah Mohan, Yong Chan Jung, Heber Hernandez-Arriaga, Dan N. Le, Si Joon Kim, Jang-Sik Lee, Jinho Ahn, Jiyoung Kim
Summary: In this study, a threshold switching (TS) selector with an Ag doping-based nano-polycrystalline ZnO switching layer was developed. The TS selector showed remarkable electroforming-free selection behavior, high device yield, and stable threshold voltage.
IEEE ELECTRON DEVICE LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Eun-Kyeong Jang, Ik-Jyae Kim, Cheon An Lee, Chiweon Yoon, Jang-Sik Lee
Summary: This study simulated 3D NAND flash to investigate the influence of deposition temperatures on residual stress and electrical characteristics. The relationship between residual stress and electrical characteristics was described using the energy band shift. These findings have the potential to improve cell performances and optimize process parameters in 3D NAND flash technology.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2022)
Article
Multidisciplinary Sciences
Min-Kyu Kim, Ik-Jyae Kim, Jang-Sik Lee
Summary: In this study, integrated ferroelectric thin-film transistor (FeTFT) synaptic arrays were demonstrated to provide efficient parallel programming and data processing for CNNs through selective and accurate control of polarization in the ferroelectric layer.
Review
Chemistry, Multidisciplinary
Ik-Jyae Kim, Jang-Sik Lee
Summary: This review summarizes the recent developments in ferroelectric devices, particularly ferroelectric transistors, for next-generation memory and neuromorphic applications. It first reviews the types and operation mechanisms of ferroelectric memories, then discusses the issues limiting the realization of high-performance ferroelectric transistors and possible solutions. It also reviews the experimental demonstration of ferroelectric transistor arrays, including 3D ferroelectric NAND and its operation characteristics, and outlines the challenges and strategies towards the development of next-generation memory and neuromorphic applications based on ferroelectric transistors.
ADVANCED MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Ik-Jyae Kim, Min-Kyu Kim, Jang-Sik Lee
Summary: Oxide semiconductors are promising channel materials for hafnia-based ferroelectric transistor memories. A novel design strategy is proposed to achieve increased polarization switching in oxide semiconductor-based thin-film transistors. By inserting an additional p-type CuOx layer, increased polarization switching is achieved. The results demonstrate a novel structure and fabrication method for high-performance FeTFTs for advanced 3D non-volatile memory applications.
IEEE ELECTRON DEVICE LETTERS
(2023)
Article
Multidisciplinary Sciences
Ik-Jyae Kim, Min-Kyu Kim, Jang-Sik Lee
Summary: Hardware-based neural networks (NNs) have the potential to revolutionize AI applications by extracting features from unstructured data and learning from them. However, implementing complex NN models is challenging because different tasks require different memory elements and arrays, resulting in increased chip size.
NATURE COMMUNICATIONS
(2023)
Article
Nanoscience & Nanotechnology
Goutam Kumar Gupta, Ik-Jyae Kim, Youngjun Park, Min-Kyu Kim, Jang-Sik Lee
Summary: This study demonstrates a photonic multimodal synaptic device with favorable band alignment that enables optically induced charge trapping and nonvolatile memory characteristics. The device exhibits high photoresponse and excellent synaptic characteristics through gate voltage regulation. It also shows multiwavelength response and a large dynamic range suitable for accurate artificial neural network. The simulation results based on experimental data show excellent pattern recognition accuracy after 120 epochs, demonstrating the feasibility of the device as an optical synapse in the next-generation neuromorphic system.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Multidisciplinary
Min-Kyu Kim, Ik-Jyae Kim, Jang-Sik Lee
Summary: Zirconium-doped hafnium oxide (HfZrOx) films were studied to investigate the effects of ozone exposure time during the atomic layer deposition (ALD) process on their polarization and endurance characteristics. It was found that HfZrOx with an ozone exposure time of 2.5 s exhibited the most stable endurance characteristics due to its low initial defect concentration, which was confirmed by leakage current analysis. This study highlights the importance of controlling the ozone exposure time in ALD to optimize the formation of defects in HfZrOx films for improved polarization and endurance characteristics.
Article
Engineering, Electrical & Electronic
Dongshin Kim, Jang-Sik Lee
Summary: Liquid-based devices have gained attention as bioinspired neuromorphic applications due to their advantageous properties, including high ion-diffusion coefficients and controllable ion-exchange reactions. By engineering liquid materials, multifunctional computing devices have been developed for memory and neuromorphic purposes, emulating synaptic plasticity, homeostasis, and action potentials. Utilizing liquids in computing devices offers a promising platform for high-performance memory devices and enables bioinspired computing functions.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Min-Kyu Song, Ji-Hoon Kang, Xinyuan Zhang, Wonjae Ji, Alon Ascoli, Ioannis Messaris, Ahmet Samil Demirkol, Bowei Dong, Samarth Aggarwal, Weier Wan, Seok-Man Hong, Suma George Cardwell, Irem Boybat, Jae-sun Seo, Jang-Sik Lee, Mario Lanza, Hanwool Yeon, Murat Onen, Ju Li, Bilge Yildiz, Jesus A. del Alamo, Seyoung Kim, Shinhyun Choi, Gianluca Milano, Carlo Ricciardi, Lambert Alff, Yang Chai, Zhongrui Wang, Harish Bhaskaran, Mark C. Hersam, Dmitri Strukov, H. -S. Philip Wong, Ilia Valov, Bin Gao, Huaqiang Wu, Ronald Tetzlaff, Abu Sebastian, Wei Lu, Leon Chua, J. Joshua Yang, Jeehwan Kim
Summary: Memristive technology, with oxide-based resistive switches as memristors, has gained significant attention due to its biomimetic memory properties and potential improvement in power consumption. This review provides a comprehensive overview of recent advances in memristive technology, including devices, theory, algorithms, architectures, and systems. It also discusses research directions for applications in AI hardware accelerators, in-sensor computing, and probabilistic computing. Furthermore, it offers a forward-looking perspective, outlining challenges and opportunities for further research and innovation in this field.
Article
Engineering, Electrical & Electronic
Ik-Jyae Kim, Jang-Sik Lee
Summary: This study presents a low-thermal-budget transparent ferroelectric transistor with high transmittance and good switching performance, which is suitable for next-generation transparent display technologies.
IEEE ELECTRON DEVICE LETTERS
(2023)
Proceedings Paper
Engineering, Electrical & Electronic
Jang-Sik Lee
Summary: Recently, there has been active research on the fabrication and characterization of ferroelectric materials and devices for memory and neuromorphic device applications. This paper discusses the recent research activities on the fabrication of ferroelectric thin-film transistors (FeTFTs) in detail, aiming to develop high-density memory devices. Furthermore, FeTFTs demonstrate analog memory characteristics by controlling the polarization states of ferroelectric materials, making them suitable for neuromorphic device applications.
TWENTY-NINETH INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES: TFT TECHNOLOGIES AND FPD MATERIALS (AM-FPD 22)
(2022)
