Journal
ACS APPLIED MATERIALS & INTERFACES
Volume 12, Issue 11, Pages 12949-12954Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsami.9b19697
Keywords
GaN; breakdown voltage; critical electric field; HEMTs; leakage current; 2DEG; electronics; MOVPE growth
Funding
- Engineering and Physical Sciences Research Council (EPSRC), U.K. [EP/P006973/1]
- EPSRC [EP/P006973/1] Funding Source: UKRI
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To fully exploit the advantages of GaN for electronic devices, a critical electric field that approaches its theoretical value (3 MV/cm) is desirable but has not yet been achieved. It is necessary to explore a new approach toward the intrinsic limits of GaN electronics from the perspective of epitaxial growth. By using a novel two-dimensional growth mode benefiting from our high-temperature AlN buffer technology, which is different from the classic two-step growth approach, our high-electron-mobility transistors (HEMTs) demonstrate an extremely high breakdown field of 2.5 MV/cm approaching the theoretical limit of GaN and an extremely low off-state buffer leakage of 1 nA/mm at a bias of up to 1000 V. Furthermore, our HEMTs also exhibit an excellent figure-of-merit (V-br(2)/R-on,R-sp) of 5.13 x 10(8) V-2/Omega.cm(2).
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