Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects

Published 2019 View Full Article

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Title
Schottky Barrier Variable Graphene/Multilayer-MoS2 Heterojunction Transistor Used to Overcome Short Channel Effects
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 12, Issue 2, Pages 2854-2861
Publisher
American Chemical Society (ACS)
Online
2019-12-20
DOI
10.1021/acsami.9b18577

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