Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Interface chemical and electronic properties of LaAlO3/SrVO3 heterostructures

(2018) Arnaud Fouchet et al.   JOURNAL OF APPLIED PHYSICS

Defect-Induced Exchange Bias in a Single SrRuO3 Layer

(2018) Changan Wang et al.   ACS Applied Materials & Interfaces

Localization-driven metal–insulator transition in epitaxial hole-doped Nd1−xSrxNiO3ultrathin films

(2016) Le Wang et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

Study of the electronic phase transition with low dimensionality in SrVO 3 thin films

(2016) Arnaud Fouchet et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Study of the electronic phase transition with low dimensionality in SrVO 3 thin films

(2016) Arnaud Fouchet et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Controlling Octahedral Rotations in a Perovskite via Strain Doping

(2016) A. Herklotz et al.   Scientific Reports

Origin of the metal-insulator transition in ultrathin films ofLa2/3Sr2/3MnO3

(2015) Zhaoliang Liao et al.   PHYSICAL REVIEW B

Electronics with Correlated Oxides:SrVO3/SrTiO3as a Mott Transistor

(2015) Zhicheng Zhong et al.   PHYSICAL REVIEW LETTERS

Strain Doping: Reversible Single-Axis Control of a Complex Oxide Lattice via Helium Implantation

(2015) Hangwen Guo et al.   PHYSICAL REVIEW LETTERS

Device Performance of the Mott InsulatorLaVO3as a Photovoltaic Material

(2015) Lingfei Wang et al.   Physical Review Applied

Tuning bad metal and non-Fermi liquid behavior in a Mott material: Rare-earth nickelate thin films

(2015) E. Mikheev et al.   Science Advances

Atomic-scale control of competing electronic phases in ultrathin LaNiO3

(2014) P. D. C. King et al.   Nature Nanotechnology

Two-Dimensional Mott Insulators in SrVO3Ultrathin Films

(2014) Man Gu et al.   Advanced Materials Interfaces

Metal-insulator transition induced in CaVO3 thin films

(2013) Man Gu et al.   JOURNAL OF APPLIED PHYSICS

Strain-Induced Ferromagnetism in AntiferromagneticLuMnO3Thin Films

(2013) J. S. White et al.   PHYSICAL REVIEW LETTERS

Metal-insulator transition in low dimensional La0.75Sr0.25VO3 thin films

(2011) Tran M. Dao et al.   APPLIED PHYSICS LETTERS

Metal-Insulator Transition in UltrathinLaNiO3Films

(2011) R. Scherwitzl et al.   PHYSICAL REVIEW LETTERS

Practical Experience from Porting and Executing the Wien2k Application on the EGEE Production Grid Infrastructure

(2010) Maximilian Berger et al.   Journal of Grid Computing

SRIM – The stopping and range of ions in matter (2010)

(2010) James F. Ziegler et al.   NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS

Dynamical mean-field theory within the full-potential methods: Electronic structure ofCeIrIn5,CeCoIn5, andCeRhIn5

(2010) Kristjan Haule et al.   PHYSICAL REVIEW B

Electron confinement, orbital ordering, and orbital moments ind0−d1oxide heterostructures

(2010) Victor Pardo et al.   PHYSICAL REVIEW B

Dimensional-Crossover-Driven Metal-Insulator Transition inSrVO3Ultrathin Films

(2010) K. Yoshimatsu et al.   PHYSICAL REVIEW LETTERS

Oxide Interfaces--An Opportunity for Electronics

(2010) J. Mannhart et al.   SCIENCE

Phenomenology of the normal state in-plane transport properties of high-Tc cuprates

(2008) N E Hussey   JOURNAL OF PHYSICS-CONDENSED MATTER