Journal
ACS ENERGY LETTERS
Volume 4, Issue 12, Pages 2796-2804Publisher
AMER CHEMICAL SOC
DOI: 10.1021/acsenergylett.9b01942
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Funding
- National Natural Science Foundation of China [61635001, 61474040, 51525202, 61574054]
- NSF of Hunan Province [2018JJ1005]
- Aid program for Science and Technology Innovative Research Team in Higher Educational Institutions of Hunan Province
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The energy transfer of semiconductor heterostructure microplates (H-MPs) plays a crucial role in the performance of various optoelectronic devices they construct. Compared to compact heterostructures, the energy transfer in H-MPs involves an additional carrier diffusion process which results in a low carrier population at the heterointerface and thereby leads to a poor energy-transfer efficiency. Based on an energy-funneling mechanism, CdSxSe1-x lateral H-MPs with a bandgap-graded donor are engineered to efficiently and directionally drive carriers to the heterointerface. The cathode-luminescence study visually presents the enhancement of the carrier transport efficiency. We systematically studied the energy-transfer process in the H-MPs through time-resolved photoluminescence experiments. Compared to the low-energy input efficiency (EIE) of similar to 20.5% in a common H-MP without a bandgap-graded donor, the EIE for a CdSxSe1-x H-MP with a bandgap-graded donor can be improved to similar to 109.3%. This bandgap engineering gives a general strategy to improve the energy-transfer efficiency in H-MPs.
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