Journal
ADVANCED OPTICAL MATERIALS
Volume 8, Issue 1, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201901568
Keywords
bulk heterojunction; charge injection; dark current; organic photodiodes; reverse bias
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Funding
- Ministry of Education, Culture and Science [024.001.035]
- European Research Council under the European Union's Seventh Framework Programme (FP/2007-2013)/ERC [339031]
- Marie Sklodowska-Curie Actions Innovative Training Network H2020-MSCAITN-2014 INFORM [675867]
- Marie Curie Actions (MSCA) [675867] Funding Source: Marie Curie Actions (MSCA)
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Minimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias ( J(d)) and the properties of the bulk heterojunction (BHJ) active layer has so far not been established. Here, a systematic analysis of J(d) in state-of-the-art BHJ OPDs using five polymers with a range of energy levels and charge transport characteristics is presented. The magnitude and activation energy of J(d) are explained using a model that assumes charge injection from the metal contacts into an energetically disordered semiconductor. By relating J(d) to material parameters, insights into the origin of J(d) are obtained that enable the future selection of successful OPD materials.
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