Development of Polymer Blends Based on PVA:POZ with Low Dielectric Constant for Microelectronic Applications

There is a huge request for the development of low dielectric constant polymeric materials for microelectronic applications. In thisstudy, polymer blends based on PVA:POZ with low dielectric constant has been fabricated. The results of XRD indicate that crystalline domain is enhanced at higher POZ concentration. Brilliant phases between spherulitesare attributed to the enhanced crystalline domains at high POZ content. White portions are appeared in SEM images on the surface of PVA:POZ blends. From EDX analysis, these leaked portions are referred to the POZ material. The number and sizes of the white portions were also found to increase with increasing the POZ content. Using electrical equivalent circuits (EEC), electrical impedance plots (Z '' vs Z') are fitted for all the samples. The results of impedance study illustrated that the resistivity of the samples increases with increasing POZ concentration. From dielectric measurements, dielectric constant was found to decrease with the introduction of more POZ into the PVA polymer. It is found to be about 1.68 at 40 wt.% POZ. Insulating materials with low dielectric constant (epsilon' < 2) are found to be important in the electronics manufacturing, owing to decrease in crosstalk, resistance-capacitance time delay and power dissipation in high-density circuits. Therefore, further investigations concerning the dielectric constant and impedance for all the samples are also carried out. The real and imaginary parts of electric modulus are studied, where minimizing of electrode polarization can be achieved.