Article
Chemistry, Physical
Jia-Jin Lu, Xin-Gui Tang, Wen -Min Zhong, Yan-Ping Jiang, Qiu-Xiang Liu
Summary: To solve the problem of information storage, a resistive variable memory of Au/Bi2Ti2O7/NiO/ITO was fabricated and its resistive switching characteristics were studied. The device showed diode-like rectifier characteristics and exhibited good durability and stability under 100 cycles of read-and-write tests. At a reading voltage of 0.44 V, the resistive switching ratio of the device reached 102. Combining XPS O 1s spectrum and further analysis of I-V double logarithmic curve, it was found that the conduction mechanism of the device was mainly related to the ohmic conduction mechanism and the space charge limiting current mechanism, and its resistive switching behavior was related to the migration of oxygen vacancies to change the interface barrier.
SURFACES AND INTERFACES
(2023)
Article
Chemistry, Physical
Dong Wang, Chao Zhang, Chuanyu Han, Lingxuan Qian, Xiaodong Huang
Summary: A room temperature Ti/VOx/ITO memristor with low switching voltages and good resistive switching characteristics is achieved through appropriate interface engineering and rational material design. The resistive switching mechanism is based on the formation and collapse of the Schottky barrier caused by oxygen ion drift in the TiOx interlayer.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Chemistry, Physical
Lidan Wang, Yaoming Xiao
Summary: The morphology and chemical composition of CH3NH3PbI3 films on bare glass and indium tin oxide (ITO) surfaces were investigated. It was found that the film on bare glass had a smoother surface and narrower grain size distribution, while the film on ITO had a rougher surface and larger grain size distribution. Energy-dispersive X-ray and X-ray photoelectron spectra revealed a superstoichiometric ratio of CH3NH3+ cations in the upper part of the CH3NH3PbI3 film deposited on ITO, which was attributed to the higher affinity of PbI2 to ITO. The migration and accumulation of CH3NH3+ cations under applied positive bias were shown to create an ionic conductivity and increase the current of the device, allowing it to switch between high and low conductivity states. This behavior makes the device function as a memristor.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Nanoscience & Nanotechnology
Shouhui Zhu, Bai Sun, Guangdong Zhou, Tao Guo, Chuan Ke, Yuanzheng Chen, Feng Yang, Yong Zhang, Jinyou Shao, Yong Zhao
Summary: Since memristors have the potential to integrate nonvolatile memory and advanced computing technology, they are considered promising for next-generation artificial intelligence. Flexible memristors have shown great prospects in wearable electronics and e-skin, but further research on their physical mechanism is needed. In this study, a flexible memristive device was fabricated, and it exhibited remarkable analog switching characteristics similar to synaptic behavior. Through detailed analysis, it was confirmed that the analog switching characteristics of the device are mainly caused by carrier tunneling.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Chemistry, Analytical
Woo Sik Choi, Min Suk Song, Hyungjin Kim, Dae Hwan Kim
Summary: Two types of InGaZnO (IGZO) memristors with different electrode materials were fabricated in this study to investigate their conduction mechanisms and degradation characteristics. The IGZO memristor exhibited abrupt switching characteristics with a Pd electrode, attributed to the formation and destruction of conductive filaments, while it showed gradual switching characteristics with a p-type Si electrode correlated to the amount of generated oxygen vacancy. The electrical characteristics and conduction mechanisms were analyzed using an energy band diagram and confirmed experimentally with random telegraph noise characteristics, indicating the trap effects on device conduction.
Article
Chemistry, Physical
Kaijin Kang, Wei Hu, Xiaosheng Tang
Summary: This Perspective provides a condensed overview of halide perovskite RRAMs, including materials, device performance, switching mechanism, and potential applications. The challenges of halide perovskite films, device fabrication, memory performance reliability, and understanding of switching mechanism are discussed, along with potential paths for future research.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Engineering, Electrical & Electronic
Sagar Khot, Dongmyung Jung, Yongwoo Kwon
Summary: This study presents a numerical model for interfacial switching memristors based on the modulation of Schottky barrier height. By forming a resistive Schottky contact between an n-type semiconductor and a high-work-function metal, the contact resistance can be controlled by the concentration of oxygen vacancies. The numerical analysis successfully reproduces the experimental results for the SrTiO3-based memristor and can be used in the computational design of various device architectures.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2023)
Article
Nanoscience & Nanotechnology
Xiaohan Zhang, Xiaoning Zhao, Xuanyu Shan, Qiaoling Tian, Zhongqiang Wang, Ya Lin, Haiyang Xu, Yichun Liu
Summary: This study investigates the humidity effect on the resistive switching characteristics of Au/CH3NH3PbI3/FTO memristor, finding that the device performs well at moderate humidity (<75%), but degrades rapidly at higher humidity (90%). An obvious decrease in low resistance states with increasing humidity levels is observed, attributed to the reduction of the iodide migration barrier due to water-induced effects on the crystal lattice.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Chemistry, Multidisciplinary
Qin Du, Wenli Wang, Jingen Wu, Zhongqiang Hu, Zhiguang Wang, Ming Liu
Summary: In this study, electroforming-free memristive behavior based on oxygen vacancy modulation in STO was investigated. The Ag/STO/(Ta/Pt) device displayed stable bipolar resistive switching and achieved ultrafast multi-resistance switching. The device's conductance can be continuously controlled on the nanosecond scale, simulating potentiation and depression of synapse, making it promising for applications in ultra-fast biological synapses and high-efficiency training of neural networks. Additionally, the defect engineering strategy used in this work provides more flexibility in the design and optimization of versatile memristor devices.
Article
Nanoscience & Nanotechnology
Alexander Vokhmintsev, Ilya Petrenyov, Robert Kamalov, Ilya Weinstein
Summary: This study explores the properties of Zr/ZrO2/Au memristors based on anodic zirconia layer, showing reliable sustained functional states with quantized conductivity. The resistive switching mechanism in these devices is sensitive to oxygen vacancy migration, with ohmic and space-charge-limited conductivities realized in different resistance states. Effective parameters for creating memristors with multiple resistive states and high resistance ratio are provided.
Article
Chemistry, Physical
Wanjun Chen, Yiping Cheng, Jun Ge, ZeLin Ma, XuCheng Cao, Shanqing Diao, Zhiyu Liu, Shusheng Pan
Summary: We report an intrinsic memristor based on ultrathin 2D-like nonlayered amorphous SiOx, which exhibits low variability, nanosecond switching speed, good endurance, and high retention. XPS analysis confirms the resistive switching mechanism involving movement of oxygen vacancies under the electric field. Additionally, simulation results demonstrate the potential of the ultrathin SiOx memristor for practical implementation of nonlayered 2D-like materials based neural network inference accelerator, achieving a high recognition accuracy of about 98% for an MNIST image classifier.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Physical
Pan-Ke Zhou, Xiao-Li Lin, Hai-Long Yang, Bin-Jun Chen, Hao-Hong Li, Zhi-Rong Chen, Shou-Tian Zheng
Summary: In this study, bio-compatible and non-toxic polydopamine (PDA) was prepared and applied in memory devices, achieving high ON/OFF ratio. The protonated PDA-based memristor exhibited enhanced bipolar resistive switching performances due to lower conjugated degree and closer lattice packing. The resistive switching mechanism involves three processes: Ohm, space charge limited conduction, and trap-filled limited. Furthermore, the memristor showed good environmental robustness, making it promising for green, stable, and biodegradable electron devices.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Engineering, Electrical & Electronic
Xuepeng Xiang, Jingjing Rao, Chaesung Lim, Qicheng Huang, Shijun Zhao, Zhen Fan, Jeong Woo Han, Yan Chen
Summary: This study demonstrates the modulation of switching dynamics in epitaxial thin-film-based memristors by using strain engineering. Two memristors with different performances were fabricated using brownmillerite SrCoO2.5 thin films with different compressive strains. The memristor with compressive strain showed smaller and narrowly distributed ON/OFF ratios, as well as more stable retention states, compared to the memristor without strain.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Materials Science, Ceramics
Srikant Kumar Mohanty, Debashis Panda, K. Poshan Kumar Reddy, Po-Tsung Lee, Chien-Hung Wu, Kow-Ming Chang
Summary: This study demonstrates that the HfOx-inserted TaOx memristor is an ideal synaptic device with analog switching ability for brain-inspired neuromorphic computing. By inserting a HfOx sandwiched layer, analog set/reset operations can be achieved along with improved switching uniformity. The research further proves that the HfOx-inserted TaOx memristor has great potential for future applications in neuromorphic computing.
CERAMICS INTERNATIONAL
(2023)
Article
Engineering, Electrical & Electronic
Xinghui Wu, Nana Cui, Qiuhui Zhang, Xicheng Xiong, Tongjun Zhu, Qixing Xu
Summary: In this study, a Au/single ZnO nanowire/Au memristor was successfully prepared using the in situ electric dielectrophoretic assembly method. The device exhibited self-rectifying behavior with a back-to-back Schottky barrier. Further experiments revealed that the current of the device was controlled by the barrier enhancement layer generated during dielectrophoresis assembly. The device in a high-resistance state demonstrated low leakage current, high resistance ratio, and fast response time.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Haijun Liu, Shengyang Sun, Jianjun Liu, Qingjiang Li, Jietao Diao, Zhiwei Li
Summary: The BMVTBP architecture combines the advantages of low-precision memristive devices and VNN to achieve MAC operations on interval data with good identification performance.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2021)
Article
Neurosciences
Shiqing Zhang, Hui Xu, Zhiwei Li, Sen Liu, Bing Song, Qingjiang Li
Summary: Ovonic threshold switch (OTS) has been widely studied in neuromorphic computing due to its high-density synapse array support, but a simple and complete model for device simulation and integrated circuit design has been lacking. In this study, a compact physical model of OTS based on the Poole-Frenkel effect and thermal dissipation effect was developed for the first time, showing good agreement with experimental results and offering insights into device performance optimization.
FRONTIERS IN NEUROSCIENCE
(2021)
Article
Neurosciences
Lixing Huang, Jietao Diao, Hongshan Nie, Wei Wang, Zhiwei Li, Qingjiang Li, Haijun Liu
Summary: The memristor-based convolutional neural network (CNN) leverages the advantages of memristive devices but faces limitations in manufacturing process, leading to the proposal of a configurable full-binary convolutional neural network (CFB-CNN) architecture with high recognition accuracy.
FRONTIERS IN NEUROSCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Yufei Zhang, Hui Xu, Zhiwei Li, Yi Sun, Hongqi Yu, Changlin Chen
Summary: In the design of memristive chips, memristor models play an important role. However, existing models are either too complex to achieve satisfactory simulation speed or too simplified to accurately reflect device characteristics. This article proposes a PieceWise linear (PWL) memristor model with well-balanced simulation speed and accuracy, suitable for large-scale arrays.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Computer Science, Artificial Intelligence
Jiwei Li, Hui Xu, Sheng-Yang Sun, Zhiwei Li, Qingjiang Li, Haijun Liu, Nan Li
Summary: The study introduces a multilayer locally-connected memristive spiking neural network (LC-MSNN) to achieve high performance and self-adaptive learning through mechanisms such as spatial and temporal interactions, local synaptic weight updates, and nonlinear conductance response.
Article
Engineering, Electrical & Electronic
Lixing Huang, Hongqi Yu, Changlin Chen, Jie Peng, Jietao Diao, Hongshan Nie, Zhiwei Li, Haijun Liu
Summary: Memristor-based convolutional neural networks (CNNs) have been extensively studied in the field of edge computing due to their high integration density and powerful processing capability. However, the low yield of memristor array and the variation in memristance pose limitations for the widespread application of memristor-based CNNs. To address this issue, a training strategy is proposed to enhance the robustness of memristor-based binarized neural networks for embedded applications.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Computer Science, Hardware & Architecture
Junwei Zeng, Nuo Xu, Yabo Chen, Chenglong Huang, Zhiwei Li, Liang Fang
Summary: Traditional CMOS-based von-Neumann computer architecture faces the issue of memory wall, which limits data processing efficiency and consumes energy due to the speed mismatch between processor and memory. Recently, novel in-memory computing paradigms using non-volatile memories have emerged as promising solutions. In this study, we propose a new in-memory computing unit based on a memory array with magnetoelectric spin-orbit logic (MESO) device, which allows for several logic operations within the memory array. The proposed design shows significant improvement in storage delay and logic delay compared to other spintronics-based devices.
ACM TRANSACTIONS ON DESIGN AUTOMATION OF ELECTRONIC SYSTEMS
(2023)
Article
Computer Science, Artificial Intelligence
Jiwei Li, Hui Xu, Sheng-Yang Sun, Nan Li, Qingjiang Li, Zhiwei Li, Haijun Liu
Summary: This article introduces an improved training algorithm for multilayer memristive spiking neural networks (MSNN) that supports in situ learning in hardware through three methods spontaneously regulating hidden neurons and updating weights in situ. Experimental results demonstrate that the proposed MSNN achieves high recognition accuracy and robustness, performing well against nonideal factors.
IEEE TRANSACTIONS ON COGNITIVE AND DEVELOPMENTAL SYSTEMS
(2022)
Article
Engineering, Electrical & Electronic
Xingzhi Fu, Qingjiang Li, Weihe Wang, Hui Xu, Yinan Wang, Wei Wang, Hongqi Yu, Zhiwei Li
Summary: This brief introduces a high-speed memristor-based N-bit ripple carry adder (RCA) with a special design to facilitate implementation in 1T1R arrays. The proposed RCA uses Memristor-Aided LoGIC (MAGIC) to calculate and store outputs in parallel, resulting in a significant reduction in delay compared to existing memristive RCAs.
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS
(2022)
Article
Nanoscience & Nanotechnology
Weihe Wang, Yinan Wang, Zhiwei Li, Xingzhi Fu, Mingxin Deng, Xiaojuan Liu, Qingjiang Li, Hui Xu
Summary: This paper proposes a high-reliable 2T2R synaptic structure for constructing a 4-bit MN-ADC with high-speed and accurate conversion capability, which is perfectly compatible with 1T1R crossbar arrays.
Article
Engineering, Electrical & Electronic
Weihe Wang, Zhiwei Li, Xingzhi Fu, Yinan Wang, Qingjiang Li
Summary: This paper proposes a pipelined Hopfield neural network architecture for memristor-based analog-to-digital converter (ADC), which allows self-adaptive weight tuning. The training algorithm is modified to reduce complexity and make it hardware-friendly. The synapse matrix can adapt to the crossbar array. The proposed architecture achieves good performance in simulation but is limited by the comparator in experimental performance.
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS
(2022)
Article
Engineering, Electrical & Electronic
Yinan Wang, Hakan Johansson, Mingxin Deng, Zhiwei Li
Summary: This paper comprehensively analyzes and compares two different timing-mismatch compensation strategies for two-channel time-interleaved analog-to-digital converters. The paper introduces a novel compensation structure that achieves a remarkably greater spurious-free dynamic range (SFDR) compared to existing structures. Theoretical derivations and simulations validate the proposed structures.
IEEE TRANSACTIONS ON SIGNAL PROCESSING
(2022)
Article
Automation & Control Systems
Zhiwei Li, Hongchang Long, Xi Zhu, Yinan Wang, Haijun Liu, Qingjiang Li, Nuo Xu, Hui Xu
Summary: This paper proposes a method of error detection and correction (EDC) based on memristor-based stateful logic operation, which improves accuracy by leveraging the concept of redundancy, and demonstrates the feasibility of the proposed method in practical devices.
ADVANCED INTELLIGENT SYSTEMS
(2022)
Proceedings Paper
Engineering, Electrical & Electronic
Hongchang Long, Jietao Diao, Xi Zhu, Zhiwei Li, Haijun Liu
Summary: In-memory computing based on memristor technology has attracted significant interest as a potential solution to break the data-transfer bottleneck in von Neumann computer architecture. Using memristor-based logic gates, such as material implication (IMP), offers a way to achieve various Boolean functions. By deducing formulas and designing voltage application schemes, different Boolean functions can be realized effectively with the help of these logic gates' structures.
2021 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS)
(2021)
Proceedings Paper
Engineering, Electrical & Electronic
Xi Zhu, Hui Xu, Hongchang Long, Qingjiang Li, Zhiwei Li, Haijun Liu, Yinan Wang
Summary: Although memristive stateful logic is a promising candidate for energy-efficient edge computing, reliability remains a challenge. This study analyzes the reliability of memristive stateful logic and proposes an n-modular redundancy method for error correction, which efficiently increases successful operation rate.
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM)
(2021)
Article
Physics, Multidisciplinary
Tinggui Chen, Baizhan Xia, Dejie Yu, Chuanxing Bi
Summary: This study proposes a gradient phononic crystal structure for enhanced acoustic sensing. By breaking the symmetry of the PC structure, topologically protected edge states are introduced, resulting in topological acoustic rainbow trapping. The robustness and enhancement properties are verified numerically and experimentally.
