4.8 Article

Single-Crystalline γ-Ga2S3 Nanotubes via Epitaxial Conversion of GaAs Nanowires

Journal

NANO LETTERS
Volume 19, Issue 12, Pages 8903-8910

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/acs.nanolett.9b03783

Keywords

Nanowires; Kirkendall effect; cathodoluminescence; electron energy loss spectroscopy; optoelectronics

Funding

  1. National Science Foundation, Division of Materials Research, Solid State and Materials Chemistry Program [DMR-1607795]
  2. Swiss National Science Foundation [40B2-0_176680, 200020_137648]
  3. European Union through Horizon-2020 (Project LIMQUET)
  4. U.S. Department of Energy [DE-AC05-00OR22725]
  5. Laboratory Directed Research and Development Program of Oak Ridge National Laboratory
  6. Swiss National Science Foundation (SNF) [40B2-0_176680, 200020_137648] Funding Source: Swiss National Science Foundation (SNF)

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The chemical transformation of nanowire templates into nanotubes is a promising avenue toward hollow one-dimensional (1D) nanostructures. To date, high-quality single crystalline tubes of nonlayered inorganic crystals have been obtained by solid-state reactions in diffusion couples of nanowires with deposited thin film shells, but this approach presents issues in achieving single-phase tubes with a desired stoichiometry. Chemical transformations with reactants supplied from the gas- or vapor-phase can avoid these complications, allowing single-phase nanotubes to be obtained through self-termination of the reaction once the sacrificial template has been consumed. Here, we demonstrate the realization of this scenario with the transformation of zincblende GaAs nanowires into single-crystalline cubic gamma-Ga2S3 nanotubes by reaction with sulfur vapor. The conversion proceeds via the formation of epitaxial GaAs-Ga2S3 core-shell structures, vacancy injection and aggregation into Kirkendall voids, elastic relaxation of the detached Ga2S3 shell, and finally complete incorporation of Ga in a crystalline chalcogenide tube. Absorption and luminescence spectroscopy on individual nanotubes show optoelectronic properties, notably a similar to 3.1 eV bandgap and intense band-edge and near band-edge emission consistent with high-quality single crystals, along with transitions between gap-states due to the inherent cation-vacancy defect structure of Ga2S3. Our work establishes the transformation of nanowires via vapor-phase reactions as a viable approach for forming single-crystalline hollow 1D nanostructures with promising properties.

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