Journal
JOURNAL OF APPLIED PHYSICS
Volume 126, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5097172
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Funding
- National Science Foundation (NSF) DMREF program [1534279, 1534303]
- NSF Engineering Research Center for Power Optimization of Electro-Thermal Systems (POETS) [EEC-1449548]
- Stanford SystemX Alliance
- ASCENT, one of six centers in JUMP, a SRC program - DARPA
- NSF as part of the National Nanotechnology Coordinated Infrastructure Award [ECCS-1542152]
- Air Force Office of Scientific Research [FA9550615-1-0187 DEF]
- DST-INSPIRE Grant, India [IFA17-MS122]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1534279, 1534303] Funding Source: National Science Foundation
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Aluminum nitride (AlN) plays a key role in modern power electronics and deep-ultraviolet photonics, where an understanding of its thermal properties is essential. Here, we measure the thermal conductivity of crystalline AlN by the 3. method, finding that it ranges from 674 +/- 56Wm(-1) K-1 at 100 K to 186 +/- 7 Wm(-1) K-1 at 400 K, with a value of 237 +/- 6Wm(-1) K-1 at room temperature. We compare these data with analytical models and first-principles calculations, taking into account atomic-scale defects (O, Si, C impurities, and Al vacancies). We find that Al vacancies play the greatest role in reducing thermal conductivity because of the largest mass-difference scattering. Modeling also reveals that 10% of heat conduction is contributed by phonons with long mean free paths (MFPs), over similar to 7 mu m at room temperature, and 50% by phonons with MFPs over similar to 0.3 mu m. Consequently, the effective thermal conductivity of AlN is strongly reduced in submicrometer thin films or devices due to phonon-boundary scattering. Published under license by AIP Publishing.
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