Journal
CHEMICAL PHYSICS LETTERS
Volume 733, Issue -, Pages -Publisher
ELSEVIER
DOI: 10.1016/j.cplett.2019.136663
Keywords
MoSe2; Hexagon-like; Chemical vapor deposition; Two-dimensional materials; Field effect transistor
Funding
- Natural Science Foundation Project of Heilongjiang Province of China [YQ2019B009]
- Natural Science Fundamental Research Project of Department of Education of Heilongjiang Province of China [135309336, 135309449, 135309116]
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In this work, we developed a process for preparing hexagon-like shaped MoSe2 monolayers with sawtooth edge via controllable chemical vapor deposition (CVD) technique in atmospheric pressure, resulting in large-scale MoSe2 atom layers with the size of similar to 20 mu m and the height of similar to 0.8 nm. Raman, Photoluminescence (PL) and transmission electron microscopy (TEM) characterizations affirmed that the grown products possess high quality, and the electrical measurement results of the device with the mobility of 0.21 cm(2) V(-1 )s(-1) based on as-obtained products manifest that the underlying applications of MoSe2 in nanoelectronic field.
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