Ultrahigh-Mobility and Solution-Processed Inorganic P-Channel Thin-Film Transistors Based on a Transition-Metal Halide Semiconductor

Published 2019 View Full Article

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Title
Ultrahigh-Mobility and Solution-Processed Inorganic P-Channel Thin-Film Transistors Based on a Transition-Metal Halide Semiconductor
Authors
Keywords
-
Journal
ACS Applied Materials & Interfaces
Volume 11, Issue 43, Pages 40243-40251
Publisher
American Chemical Society (ACS)
Online
2019-10-08
DOI
10.1021/acsami.9b12654

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