Journal
SCIENCE ADVANCES
Volume 5, Issue 8, Pages -Publisher
AMER ASSOC ADVANCEMENT SCIENCE
DOI: 10.1126/sciadv.aaw4515
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Funding
- National Natural Science Foundation of China [21673039, 21573042, 21805039]
- Fujian Provincial Department of Science and Technology [2014 J06003, 2016 J01046, 2018 J07001]
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Resistive random-access memory (RRAM) has evolved as one of the most promising candidates for the next-generation memory, but bistability for information storage, simultaneous implementation of resistive switching and rectification effects, and a better understanding of switching mechanism are still challenging in this field. Herein, we report a RRAM device based on a chiral metal-organic framework (MOF) FJU-23-H2O with switched hydrogen bond pathway within its channels, exhibiting an ultralow set voltage (similar to 0.2 V), a high ON/OFF ratio (similar to 10(5)), and a high rectification ratio (similar to 10(5)). It is not only the first MOF with voltage-gated proton conduction but also the first single material showing both rectifying and resistive switching effects. By single-crystal x-ray diffraction analyses, the mechanism of the resistive switching has been demonstrated.
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