Journal
ADVANCED ELECTRONIC MATERIALS
Volume 5, Issue 12, Pages -Publisher
WILEY
DOI: 10.1002/aelm.201900576
Keywords
active-matrix organic light emitting displays; bias-stress; organic permeable base transistors; organic transistors; stability
Funding
- Deutsche Forschungsgemeinschaft (DFG) within the FlexART project [LE 747/52-1, SPP 1796]
- China Scholarship Council [201706890003]
- Cluster of Excellence Center for Advancing Electronics Dresden (cfaed)
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Vertical organic permeable base transistors (OPBT) can drive large current densities of kA cm(-2) and achieve record-high transition frequencies of up to 40 MHz. They are therefore an interesting candidate for numerous applications, including the use in active-matrix organic light emitting display (AMOLED) backplanes. However, the transistor characteristics are required to be stable against electrical stress. Here, the threshold voltage shifts under current- and voltage-stress conditions over various temperatures and illumination conditions are investigated. OPBTs show excellent stability under the probed conditions, even at extended exposure to large on-state currents of 3 A cm(-2). The strongest shifts are observed at elevated temperatures, suggesting a temperature activation of the stress effect. On-state current stress scales linearly with the current density, while off-state stress is induced by the applied voltage. The effects of both kinds of stress are complementary and can compensate each other. It is found that the OPBT is perfectly suitable as a switching transistor in AMOLED displays.
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