Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors

Published 2019 View Full Article

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Title
Investigation on the improvement of stability of nitrogen doped amorphous SiInZnO thin-film transistors
Authors
Keywords
Nitrogen doping, Amorphous oxide semiconductor, Thin film transistor, SiInZnO
Journal
SOLID-STATE ELECTRONICS
Volume 158, Issue -, Pages 59-63
Publisher
Elsevier BV
Online
2019-05-21
DOI
10.1016/j.sse.2019.05.013

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