Ultra-Wide Bandgap AlGaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors with high-k ALD ZrO2 dielectric

Published 2019 View Full Article

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Title
Ultra-Wide Bandgap AlGaN Metal Oxide Semiconductor Heterostructure Field Effect Transistors with high-k ALD ZrO2 dielectric
Authors
Keywords
-
Journal
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Volume -, Issue -, Pages -
Publisher
IOP Publishing
Online
2019-09-25
DOI
10.1088/1361-6641/ab4781

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