Journal
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS
Volume 257, Issue 1, Pages -Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/pssb.201900290
Keywords
carrier transport behavior; crystal growth; CsI3; X-ray detection
Categories
Funding
- National Natural Science Foundations of China [U1631116, 51702132, 51872228, 51802262]
- National Key Research and Development Program of China [2016YFE0115200, 2016YFA0201104]
- Natural Science Basic Research Plan in Shaanxi Province of China [2017KW-029]
- Natural Science Foundation of Shaanxi Province [2019JQ-459]
- Natural Science Foundation of Jiangsu Province, China [BK20170482]
- Fundamental Research Funds for the Central Universities [3102018jcc036, 3102019TS0408]
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Herein, a novel binary compound hypervalent CsI3 crystal is designed for X-ray detection. Solution-grown rod-like CsI3 single crystal is identified as a semiconductor with a bandgap of 1.79 eV and high resistivity of 2.17 x 10(9) omega cm, which make it suitable for X-ray detection. Based on carbon/CsI3 crystal/carbon device, a high X-ray sensitivity of up to 158.1 +/- 6.0 mu C Gy(-1) cm(-2) is achieved under a low electrical field of 55 V mm(-1), which is eight times higher than that of the commercial alpha-Se X-ray detectors. The high sensitivity of hypervalent CsI3 is attributed to the long carrier life time (approximate to 470 mu s) and large photocurrent gain (150%). The potential applications of photoconversion and nuclear radiation detection using alkali halides are demonstrated.
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